DocumentNumber:MW7IC2020N FreescaleSemiconductor Rev. 1, 12/2013 TechnicalData RFLDMOSWidebandIntegrated PowerAmplifier MW7IC2020NT1 The MW7IC2020N wideband integrated circuit is designed with on--chip matching that makes it usable from 1805 to 2170 MHz. This multi--stage structureisratedfor26to32Voltoperationandcoversalltypicalcellularbase station modulation formats. DriverApplication2100MHz 1805--2170MHz,2.4WAVG.,28V TypicalSingle--Carrier W--CDMA Performance: V =28Volts,I = DD DQ1 SINGLEW--CDMA 40mA, I = 230mA, P = 2.4Watts Avg., IQ MagnitudeClipping, DQ2 out RFLDMOSWIDEBAND ChannelBandwidth= 3.84MHz, Input SignalPAR = 7.5dB 0.01% INTEGRATEDPOWERAMPLIFIER Probability onCCDF. G PAE OutputPAR ACPR ps Frequency (dB) (%) (dB) (dBc) 2110MHz 32.6 16.8 7.7 --51.3 2140MHz 32.6 17.0 7.6 --51.4 2170MHz 32.4 17.0 7.5 --51.6 Capableof Handling10:1VSWR, 32Vdc, 2140MHz, P = 33Watts out CW (3dB Input Overdrivefrom RatedP ) PQFN8 8 out PLASTIC Typical P 1dB CompressionPoint 20Watts CW out DriverApplication1800MHz TypicalSingle--Carrier W--CDMA Performance: V =28Volts, DD I =40mA,I = 230mA, P = 2.4Watts Avg., IQ Magnitude DQ1 DQ2 out Clipping, ChannelBandwidth= 3.84MHz, Input SignalPAR = 7.5dB 0.01%Probability onCCDF. G PAE OutputPAR ACPR ps Frequency (dB) (%) (dB) (dBc) 1805MHz 31.8 17.4 7.6 --51.2 1840MHz 31.8 17.4 7.7 --50.2 1880MHz 31.8 17.4 7.7 --51.0 Features CharacterizedwithSeries Equivalent Large--Signal ImpedanceParameters andCommonSourceS--Parameters On--ChipMatching(50Ohm Input, DC Blocked) (1) IntegratedQuiescent Current TemperatureCompensationwithEnable/DisableFunction IntegratedESD Protection InTapeandReel. T1Suffix = 1000Units, 16mm TapeWidth, 13--inchReel. V V GS1 GS2 24 23 22 21 20 19 QuiescentCurrent 18 NC 1 NC (1) TemperatureCompensation GND 2 17 NC 16 RF 3 RF /V in out DS2 4 15 RF /V RF out DS2 in 14 GND 5 NC RF RF /V in out DS2 NC 6 13 NC 7 8 9 10 11 12 V DS1 Figure1.FunctionalBlockDiagram Figure2.PinConnections 1. RefertoAN1977,QuiescentCurrentThermalTrackingCircuitintheRFIntegratedCircuitFamilyandtoAN1987,QuiescentCurrentControl fortheRFIntegratedCircuitDeviceFamily.GotoTable1.MaximumRatings Rating Symbol Value Unit Drain--SourceVoltage V --0.5,+65 Vdc DSS Gate--SourceVoltage V --6.0,+10 Vdc GS OperatingVoltage V 32,+0 Vdc DD StorageTemperatureRange T --65to+150 C stg (1,2) OperatingJunctionTemperature T 150 C J InputPower P 37 dBm in Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance,JunctiontoCase R C/W JC CaseTemperature84C,2.4W CW Stage1,28Vdc,I =40mA,2140MHz 9.0 DQ1 Stage2,28Vdc,I =230mA,2140MHz 1.9 DQ2 CaseTemperature92C,24W CW Stage1,28Vdc,I =40mA,2140MHz 8.6 DQ1 Stage2,28Vdc,I =230mA,2140MHz 1.6 DQ2 Table3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 2 MachineModel(perEIA/JESD22--A115) A ChargeDeviceModel(perJESD22--C101) III Table4.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113,IPC/JEDECJ--STD--020 3 260 C Table5.ElectricalCharacteristics (T =25 Cunless otherwisenoted) A Characteristic Symbol Min Typ Max Unit Stage1OffCharacteristics ZeroGateVoltageDrainLeakageCurrent I 10 Adc DSS (V =65Vdc,V =0Vdc) DS GS ZeroGateVoltageDrainLeakageCurrent I 1 Adc DSS (V =28Vdc,V =0Vdc) DS GS Gate--SourceLeakageCurrent I 1 Adc GSS (V =1.5Vdc,V =0Vdc) GS DS Stage1OnCharacteristics GateThresholdVoltage V 1.0 2.0 3.0 Vdc GS(th) (V =10Vdc,I =12 Adc) DS D GateQuiescentVoltage V 2.9 Vdc GS(Q) (V =28Vdc,I =40mAdc) DS DQ1 FixtureGateQuiescentVoltage V 6.2 6.9 7.7 Vdc GG(Q) (V =28Vdc,I =40mAdc,MeasuredinFunctionalTest) DD DQ1 1. Continuous useatmaximum temperaturewillaffectMTTF. 2. MTTFcalculatoravailableat