BLA6H1011-600,112 NXP

BLA6H1011-600 LDMOS avionics power transistor Rev. 02 1 September 2015 Product data sheet 1. Product profile 1.1 General description 600 W LDMOS pulsed power transistor intended for TCAS and IFF applications in the 1030 MHz to 1090 MHz range. Table 1. Test information Typical RF performance at T =25 C t = 50 s = 2 % I = 100 mA in a class-AB production case p Dq test circuit. Mode of operation f V P G t t DS L p D r f (MHz) (V) (W) (dB) (%) (ns) (ns) pulsed RF 1030 to 1090 48 600 17 52 11 5 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits Typical pulsed RF performance at a frequency of 1030 MHz to 1090 MHz, a supply voltage of 48 V, an I of 100 mA, a t of 50 s with of 2 %: Dq p Output power = 600 W Power gain = 17 dB Efficiency = 52 % Easy power control Integrated ESD protection High flexibility with respect to pulse formats Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (1030 MHz to 1090 MHz) Internally matched for ease of use Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS)BLA6H1011-600 LDMOS avionics power transistor 1.3 Applications 600 W LDMOS pulsed power transistor intended for TCAS and IFF applications in the 1030 MHz to 1090 MHz frequency range 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1drain1 12 1 2drain2 5 3gate1 3 4gate2 3 4 5 4 1 5source 2 sym117 1 Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLA6H1011-600 - flanged balanced LDMOST ceramic package SOT539A 2 mounting holes 4 leads 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage - 100 V DS V gate-source voltage 0.5 13 V GS I drain current - 72 A D T storage temperature 65 +150 C stg T junction temperature - 200 C j 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Typ Unit Z transient thermal impedance from T =85 C P =600 W th(j-case) case L junction to case t = 100 s = 10 % 0.06 K/W p t = 50 s = 2 % 0.035 K/W p BLA6H1011-600 2 All information provided in this document is subject to legal disclaimers. Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 02 1 September 2015 2 of 13