X-On Electronics has gained recognition as a prominent supplier of BLF145,112 RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. BLF145,112 RF MOSFET Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

BLF145,112 NXP

BLF145,112 electronic component of NXP
Images are for reference only
See Product Specifications
Part No.BLF145,112
Manufacturer: NXP
Category: RF MOSFET Transistors
Description: RF MOSFET Transistors RF DMOS 30W HF
Datasheet: BLF145,112 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 46.3301 ea
Line Total: USD 46.33 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ : 1
Multiples : 1
1 : USD 46.3301
2 : USD 45.7265
5 : USD 44.5677
10 : USD 43.7951

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Technology
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Operating Frequency
Gain
Output Power
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Transistor Type
Brand
Product Type
Factory Pack Quantity :
Vgs - Gate-Source Breakdown Voltage
Vgs Th - Gate-Source Threshold Voltage
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BLF145,112 from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BLF145,112 and other electronic components in the RF MOSFET Transistors category and beyond.

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BLF145 HF power MOS transistor Rev. 04 5 January 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. NXP Semiconductors Product specication HF power MOS transistor BLF145 FEATURES PIN CONFIGURATION High power gain Low noise figure handbook, halfpage Good thermal stability 1 4 Withstands full load mismatch. d DESCRIPTION g Silicon N-channel enhancement s MBB072 mode vertical D-MOS transistor designed for SSB transmitter 23 applications in the HF frequency range. The transistor is encapsulated MSB057 in a 4-lead, SOT123A flange package, with a ceramic cap. All Fig.1 Simplified outline and symbol. leads are isolated from the flange. Matched gate-source voltage (V ) GS groups are available on request. CAUTION This product is supplied in anti-static packing to prevent damage caused by PINNING - SOT123A electrostatic discharge during transport and handling. For further information, PIN DESCRIPTION refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B. 1 drain 2 source WARNING 3 gate Product and environmental safety - toxic materials 4 source This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. QUICK REFERENCE DATA RF performance at T = 25 C in a common source test circuit. h (1) MODE OF OPERATION f (MHz) V (V) I (A) P (W) G (dB) (%) d (dB) DS D L p D 3 SSB, class-A 28 28 1.3 8 (PEP) >24 -<- 40 SSB, class-AB 28 28 - 30 (PEP) typ. 20 typ. 40 typ. - 35 Note 1. 2-tone efficiency. Rev. 04 - 5 January 2007 2 of 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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