BLF542 UHF power MOS transistor Rev. 4 1 September 2015 Product data sheet IMPORTANT NOTICE Dear customer, As of December 7th, 2015 BL RF Power of NXP Semiconductors will operate as an independent company under the new trade name Ampleon, which will be used in future data sheets together with new contact details. In data sheets, where the previous Philips references is mentioned, please use the new links as shown below. Philips Semiconductors Product specication UHF power MOS transistor BLF542 FEATURES PINNING - SOT171A High power gain PIN DESCRIPTION Easy power control 1 source Good thermal stability 2 source Gold metallization ensures excellent reliability 3 gate Withstands full load mismatch 4 drain Designed for broadband operation. 5 source 6 source APPLICATIONS Large signal amplifier applications in the UHF frequency range. 2 4 6 handbook, halfpage d DESCRIPTION g s N-channel enhancement mode vertical D-MOS power 1 3 5 transistor encapsulated in a 6-lead, SOT171A flange Top view MAM390 package with a ceramic cap. All leads are isolated from the flange. Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA RF performance at T =25 C in a common source class-B circuit. h f V P G DS L p D MODE OF OPERATION (MHz) (V) (W) (dB) (%) CW, class-B 500 28 5 >13 >50 CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 2003 Sep 18 2