BLF548 UHF push-pull power MOS transistor Rev. 5 1 September 2015 Product data sheet IMPORTANT NOTICE Dear customer, As of December 7th, 2015 BL RF Power of NXP Semiconductors will operate as an independent company under the new trade name Ampleon, which will be used in future data sheets together with new contact details. In data sheets, where the previous Philips references is mentioned, please use the new links as shown below. Philips Semiconductors Product specication UHF push-pull power MOS transistor BLF548 FEATURES PIN CONFIGURATION High power gain Easy power control Good thermal stability 12 Gold metallization ensures halfpage d 2 excellent reliability g 2 Designed for broadband operation. s g 1 d 55 1 DESCRIPTION 34 MSB008 MBB157 Top view Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor designed for communications transmitter applications in the UHF frequency Fig.1 Simplified outline and symbol. range. The transistor is encapsulated in a 4-lead, SOT262A2 balanced flange CAUTION package, with two ceramic caps. The This product is supplied in anti-static packing to prevent damage caused by mounting flange provides the electrostatic discharge during transport and handling. For further information, common source connection for the refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B. transistors. PINNING - SOT262A2 WARNING Product and environmental safety - toxic materials PIN DESCRIPTION 1 drain 1 This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged. All persons who handle, use or dispose 2 drain 2 of this product should be aware of its nature and of the necessary safety 3 gate 1 precautions. After use, dispose of as chemical or special waste according to 4 gate 2 the regulations applying at the location of the user. It must never be thrown 5 source out with the general or domestic waste. QUICK REFERENCE DATA RF performance at T = 25 C in a push-pull common source test circuit. h f V P G DS L p D MODE OF OPERATION (MHz) (V) (W) (dB) (%) CW, class-B 500 28 150 >10 >50 2003 Sep 26 2