Document Number: MW6S010N Freescale Semiconductor Rev. 5, 6/2009 Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MW6S010NR1 Designed for Class A or Class AB base station applications with frequencies MW6S010GNR1 up to 1500 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications. Typical Two-Tone Performance at 960 MHz: V = 28 Volts, I = 125 mA, DD DQ P = 10 Watts PEP out Power Gain 18 dB 450-1500 MHz, 10 W, 28 V Drain Efficiency 32% LATERAL N-CHANNEL IMD -37 dBc BROADBAND RF POWER MOSFETs Capable of Handling 10:1 VSWR, 28 Vdc, 960 MHz, 10 Watts CW Output Power Features Characterized with Series Equivalent Large-Signal Impedance Parameters On-Chip RF Feedback for Broadband Stability CASE 1265-09, STYLE 1 Operation Qualified Up to a Maximum of 32 V DD TO-270-2 Integrated ESD Protection PLASTIC MW6S010NR1 225C Capable Plastic Package RoHS Compliant In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel. CASE 1265A-03, STYLE 1 TO-270-2 GULL PLASTIC MW6S010GNR1 Table 1. Maximum Ratings Rating Symbol Value Unit Drain-Source Voltage V -0.5, +68 Vdc DSS Gate-Source Voltage V -0.5, +12 Vdc GS Storage Temperature Range T - 65 to +150 C stg Case Operating Temperature T 150 C C (1,2) Operating Junction Temperature T 225 C J Table 2. Thermal Characteristics (2,3) Characteristic Symbol Value Unit Thermal Resistance, Junction to Case R C/W JC Case Temperature 80C, 10 W PEP 2.85 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22-A114) 1A Machine Model (per EIA/JESD22-A115) A Charge Device Model (per JESD22-C101) III Table 4. Moisture Sensitivity Level Test Methodology Rating Package Peak Temperature Unit Per JESD22-A113, IPC/JEDEC J-STD-020 3 260 C Table 5. Electrical Characteristics (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit Off Characteristics Zero Gate Voltage Drain Leakage Current I 10 Adc DSS (V = 68 Vdc, V = 0 Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 1 Adc DSS (V = 28 Vdc, V = 0 Vdc) DS GS Gate-Source Leakage Current I 1 Adc GSS (V = 5 Vdc, V = 0 Vdc) GS DS On Characteristics Gate Threshold Voltage V 1.5 2.3 3 Vdc GS(th) (V = 10 Vdc, I = 100 Adc) DS D Gate Quiescent Voltage V 2 3.1 4 Vdc GS(Q) (V = 28 Vdc, I = 125 mAdc, Measured in Functional Test) DD D Drain-Source On-Voltage V 0.27 0.35 Vdc DS(on) (V = 10 Vdc, I = 0.3 Adc) GS D Dynamic Characteristics Reverse Transfer Capacitance C 0.32 pF rss (V = 28 Vdc 30 mV(rms)ac 1 MHz, V = 0 Vdc) DS GS Output Capacitance C 10 pF oss (V = 28 Vdc 30 mV(rms)ac 1 MHz, V = 0 Vdc) DS GS Input Capacitance C 23 pF iss (V = 28 Vdc, V = 0 Vdc 30 mV(rms)ac 1 MHz) DS GS Functional Tests (In Freescale Test Fixture, 50 ohm system) V = 28 Vdc, I = 125 mA, P = 10 W PEP, f = 960 MHz, Two-Tone Test, DD DQ out 100 kHz Tone Spacing Power Gain G 17.5 18 20.5 dB ps Drain Efficiency 31 32 % D Intermodulation Distortion IMD -37 -33 dBc Input Return Loss IRL -18 -10 dB Typical Performances (In Freescale 450 MHz Demo Board, 50 hm system) V = 28 Vdc, I = 150 mA, P = 10 W PEP, 420-470 MHz, DD DQ out Two-Tone Test, 100 kHz Tone Spacing Power Gain G 20 dB ps Drain Efficiency 33 % D Intermodulation Distortion IMD -40 dBc Input Return Loss IRL -10 dB MW6S010NR1 MW6S010GNR1 RF Device Data Freescale Semiconductor 2