BLA6H0912-500,112 NXP

BLA6H0912-500 LDMOS avionics radar power transistor Rev. 05 1 September 2015 Product data sheet 1. Product profile 1.1 General description 500 W LDMOS power transistor intended for avionics transmitter applications in the 960 MHz to 1215 MHz range such as Mode-S, TCAS, JTIDS, DME and TACAN. Table 1. Test information Typical RF performance at T =25 C t = 128 s = 10 % I = 100 mA in a class-AB case p Dq production test circuit. Mode of operation f V P G t t DS L p D r f (MHz) (V) (W) (dB) (%) (ns) (ns) pulsed RF 960 to 1200 50 450 17 50 20 6 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits Typical pulsed RF performance at a frequency of 960 MHz to 1215 MHz, a supply voltage of 50 V, an I of 100 mA, a t of 128 s with of 10 %: Dq p Output power = 450 W Power gain = 17 dB Efficiency = 50 % Easy power control Integrated ESD protection High flexibility with respect to pulse formats Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (960 MHz to 1215 MHz) Internally matched for ease of use Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)BLA6H0912-500 LDMOS avionics radar power transistor 1.3 Applications A-band power amplifiers for radar applications in the 960 MHz to 1215 MHz frequency range 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1drain 1 1 2gate 1 3source 3 2 2 3 sym112 1 Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLA6H0912-500 - flanged ceramic package 2 mounting holes 2 leads SOT634A 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage - 100 V DS V gate-source voltage 0.5 +13 V GS I drain current - 54 A D T storage temperature 65 +150 C stg T junction temperature - 200 C j 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Typ Unit Z transient thermal impedance from T =85 C P =450 W th(j-c) case L junction to case t = 32 s = 2 % 0.03 K/W p t = 128 s = 10 % 0.08 K/W p t = 2400 s = 6.4 % 0.2 K/W p BLA6H0912-500 5 All information provided in this document is subject to legal disclaimers. Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 05 1 September 2015 2 of 14