DocumentNumber:AFIC901N FreescaleSemiconductor Rev. 0, 1/2016 Technical Data RFLDMOSWidebandIntegrated PowerAmplifier AFIC901N TheAFIC901N is a2--stage, highgainamplifierdesignedtoprovideahigh level of flexibility to theamplifier designer. The deviceis unmatchedeven at the interstage, allowingperformance tobe optimizedfor any frequency inthe 1.8to 1000 MHz range. The high gain, ruggedness and wideband performance of this 1.81000MHz,30dBm,7.5V devicemakeitidealforuseasapre--driveranddriverinawiderangeof AIRFASTRFLDMOSWIDEBAND industrial,medicalandcommunications applications. INTEGRATEDPOWERAMPLIFIER TypicalNarrowbandPerformance (7.5 Vdc, T =25 C, CW) A Frequency G P ps D out (MHz) (dB) (%) (dBm) (1) 520 32.2 73.0 31.2 Typical Wideband Performance (7.5 Vdc, T =25 C, CW) A Frequency P G P in ps D out (MHz) (dBm) (dB) (%) (dBm) (2,5) 136174 0 30.6 62.1 30.6 QFN4 4 (3,5) 350520 3 27.4 61.5 30.4 (4,5) 760870 3 27.6 57.0 30.6 LoadMismatch/Ruggedness 24 23 22 21 20 19 Frequency Pin Test SignalType VSWR (MHz) (W) Voltage Result GND 1 18 GND (2) Stage1 175 CW >25:1 at all 3dB 9 No Device GND 2 17 GND Phase Angles Overdrive Degradation N.C. 3 16 N.C. (3) from rated 520 DrainB 4 Stage2 15 GateB power DrainB 5 14 GateB 1. Measured in 520 MHz narrowband test circuit. DrainB 6 13 GateB 2. Measured in 136174 MHz VHF broadband reference circuit. 3. Measured in 350520 MHz UHF broadband reference circuit. 7 8 9 10 11 12 4. Measured in 760870 MHz broadband reference circuit. 5. The values shown are the centerband performance numbers across the indicated frequency range. Note: Exposedbacksideofthepackageisthe source terminalforthe transistors. Features Figure1.PinConnections Characterized for Operation from 1.8 to 1000 MHz Unmatched Input, Interstage and Output Allowing Wide Frequency Range Utilization Stage1 Stage2 Integrated ESD Protection RF RF in out Same PCB Layout Can be Used for 136--174 MHz, 350--520 MHz and 760870 MHz Designs. 24--pin, 4 mm QFN Plastic Package TypicalApplications External Driver for Mobile Radio Power Amplifiers InterstageMatch Output Stage for Low Power Handheld Radios Figure2.TypicalApplication Driver for Communications and Industrial Systems Freescale Semiconductor, Inc., 2016. All rights reserved. AFIC901N RF DeviceData Freescale Semiconductor, Inc. 1 GateA N.C. GateA N.C. N.C. N.C. N.C. N.C. DrainA N.C. DrainA N.C.Table1.MaximumRatings Rating Symbol Value Unit Drain--Source Voltage V 0.5, +30 Vdc DSS Gate--Source Voltage V 6.0, +12 Vdc GS Storage Temperature Range T 65 to +150 C stg Case Operating Temperature Range T 40 to +150 C C (1,2) Operating Junction Temperature Range T 40 to +150 C J Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance, Junction to Case R C/W JC Case Temperature 78C, 30 dBm CW, 520 MHz Stage 1, 7.5 Vdc, I =8mA 32 DQ1 Stage 2, 7.5 Vdc, I =24mA 9.4 DQ2 Table3.ESDProtectionCharacteristics TestMethodology Class Human Body Model(perJESD22--A114) 1A, passes 250 V Machine Model(perEIA/JESD22--A115) A Charge Device Model(perJESD22--C101) II, passes 200 V Table4.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113, IPC/JEDEC J--STD--020 3 260 C 1. Continuous use at maximum temperature willaffect MTTF. 2. MTTFcalculatoravailable at