AH225 1W High Linearity InGaP HBT Amplifier Applications Repeaters Base Station Transceivers High Power Amplifiers Mobile Infrastructure LTE/WCDMA/CDMA/WiMAX 8-Pin SOIC-8 Package Product Features Functional Block Diagram 4002700 MHz Pin 1 Reference Mark 15.5dB Gain at 2140MHz +31dBm P1dB Vbias 1 8 Iref +46dBm Output IP3 300mA Quiescent Current N/C 2 7 RF Out +5V Single Supply RF In 3 6 RF Out MTTF>100 Years Capable of handling 10:1 VSWR at 5VCC, 2.14GHz, N/C 4 5 N/C +31.5dBm CW Pout or +23dBm WCDMA Pout Backside Paddle - RF/DC GND Lead-free/RoHS-compliant SOIC-8 Package General Description Pin Configuration The AH225 is a high dynamic range driver amplifier in a Pin No. Label low-cost surface-mount package. The InGaP/GaAs HBT 1 VBIAS is able to achieve high performance for various 2, 4, 5 N/C narrowband-tuned application circuits with up to 3 RF IN +46dBm OIP3 and +31.2dBm of compressed 1dB 6, 7 RF OUT power. The integrated active bias circuitry in the devices 8 IREF enables excellent stable linearity performance over Backside Paddle RF/DC GND temperature. It is housed in a lead-free/RoHS-compliant SOIC-8 package. All devices are 100% RF and DC tested. The AH225 is targeted for use as a driver amplifier in wireless infrastructure where high linearity and medium power is required. The AH225 is ideal for the final stage of small repeaters or as driver stages for high power amplifiers. In addition, the amplifier can be used for a wide variety of other applications within the 400 to 2700MHz frequency band. Ordering Information Part No. Description AH225-S8G 1W High Linearity Amplifier Standard T/R size = 1000 pieces on a 7 re el Datasheet: Rev H 02-11-16 Disclaimer: Subject to change without notice - 1 of 21 - 2016 TriQuint Semiconductor, Inc www.triquint.com / www.qorvo.com AH225 1W High Linearity InGaP HBT Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Min Typ Max Units Storage Temperature 65 to 150C V +4.5 +5 +5.25 V CC RF Input Power, CW, 50, T=+25C +26dBm T 40 +85 C CASE 6 Device Voltage (V , V ) +8V Tj for >10 hours MTTF +200 C CC BIAS Device Current 900mA Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended Device Power +5W operating conditions. Operation of this device outside the parameter ranges given above may cause permanent damage. Electrical Specifications Test conditions unless otherwise noted: V =+5 V,I = 300mA, I = 15mA , Temp= +25C, tuned application circuit CC CQ REF Parameter Conditions Min Typ Max Units Operational Frequency Range 400 2700 MHz Test Frequency 2140 MHz Gain 13.3 15.5 dB Input Return Loss 18 dB Output Return Loss 9.4 dB Output P1dB +30 +31.2 dBm Output IP3 Pout = +19dBm/tone, f=1 MH z +43 +46 dBm (1) WCDMA Channel Power ACLR=50 dBc +21.3 dBm Noise Figure 6 dB (2) Operating Current Range, Icc 300 350 mA Thermal Resistance Junction to backside paddle 17.5 35 C/W (Junction to case) jc Notes: 1. ACLR Test set-up: 3GPP WCDMA, 164DPCH, 5 MHz, no clipping, PAR = 10.2dB at 0.01% Probability. 2. This corresponds to the quiescent collector current or operating current under small-signal conditions into pins 6 and 7. Performance Summary Table Test conditions unless otherwise noted: V =+5 V, I = 300mA, Temp= +25C, in an application circuit tuned for each frequency. CC CQ Parameter Typical Units Frequency 750 940 1500 1840 1960 2140 2600 MHz Gain 20.1 19.8 17 15.1 15.4 15.2 13.2 dB Input Return Loss 14.5 10.5 17.2 11 15.4 18 19.4 dB Output Return Loss 7 8.4 11 10.7 8.3 9.4 5.5 dB Output P1dB +30.4 +31 +31.3 +30.7 +31.3 +31 +30.5 dBm (1) Output IP3 +45 +47.3 +48 +46 +53.6 +47 +48.7 dBm WCDMA Channel Power +21.2 +21.7 +22 +21.6 +21.7 +21.4 +21.3 dBm (ACLR=50 dBc) Notes: 1. OIP3 is measured with two tones at an output power of +20dBm/tone for 750 MHz, +22dBm/tone for 940 MHz and +19dBm/tone for 1490, 1840, 1960, 2140, 2600 MHz application circuits respectively. Datasheet: Rev H 02-11-16 Disclaimer: Subject to change without notice - 2 of 21 - 2016 TriQuint Semiconductor, Inc www.triquint.com / www.qorvo.com