ALM-31122
700MHz - 1GHz
1-Watt High Linearity Amplifier
Data Sheet
Description Features
Avago Technologies ALM-31122 is a high linearity 1 Watt Fully matched, input and output
PA with good OIP3 performance and exceptionally good
High linearity and P1dB
PAE at 1dB gain compression point, achieved through the
Unconditionally stable across load condition
use of Avago Technologies proprietary 0.25um GaAs En-
hancement-mode pHEMT process. Built-in adjustable temperature-compensated internal
bias circuitry
All matching components are fully integrated within the
[1]
GaAs E-pHEMT Technology
module. This makes the ALM-31122 extremely easy to use.
The adjustable temperature-compensated internal bias
5V supply
circuit allows the device to be operated at either class A or
Excellent uniformity in product specifications
class AB operation.
Tape-and-Reel packaging option available
The ALM-31122 is housed inside a miniature 5.0 x 6.0 x 1.1
MSL-3 and Lead-free
3
mm 22-lead multiple-chips-on-board (MCOB) module
package. High MTTF for base station application
Specifications
Component Image
3
900 MHz; 5V, 394mA (typical)
5.0 x 6.0 x 1.1 mm 22-lead MCOB
15.6 dB Gain
47.6 dBm Output IP3
22
17 18 19 20 21 GND
GND 1
31.6 dBm Output Power at 1dB gain compression
2 NC
RF_OUT 16
31122
GND 15 3 GND
52.5% PAE at P1dB
WWYY 14 4
GND GND
2 dB Noise Figure
GND 13 5 RF_IN
XXXX
6
7 Applications
12 11 10 9 8 GND
GND
Class A driver amplifier for GSM/CDMA Base Stations.
General purpose gain block.
Top View Bottom View
Note:
1. Enhancement mode technology employs positive gate voltage,
Notes:
Package marking provides orientation and identification thereby eliminating the need of negative gate voltage associated
31122 = Device Part Number with conventional depletion mode devices.
WWYY = Work week and Year of manufacture
XXXX = Last 4 digit of Lot number
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model = 80 V
ESD Human Body Model = 200 V
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and Control.
GND
GND
GND
GND
VDD2 VDD1
GND GND
NC VCTRL
GND GND
GND GND[2]
Absolute Maximum Rating T =25C
A
[3]
Thermal Resistance = 22 C/W
jc
Symbol Parameter Units Absolute Max.
(Vdd = 5V, Idd = 400mA, Tc = 85 C)
V Device Voltage, RF output to ground V 5.5
dd, max
Notes:
I Device Drain Current mA 750
ds, max
2. Operation of this device in excess of any of
V Control Voltage V 5.5 these limits may cause permanent damage.
ctrl,max
3. Thermal resistance measured using Infra-Red
P CW RF Input Power dBm 25
in,max
measurement technique.
[4]
P Total Power Dissipation W 4.125
diss 4. Board (bottom of the device) temperature TB
is 25 C. Derate 45.7mW/ C for Tc > 59.3 C.
o
T Junction Temperature C 150
j,max
o
T Storage Temperature C -65 to 150
STG
[5, 6]
Product Consistency Distribution Charts
CPK = 4.29
CPK = 2.22
Std Dev = 7 Std Dev = 0.208
.34 .36 .38 .40 .42 .44 44 46 48 50 52
Figure 1. Ids; LSL = 340mA, nominal = 394mA, USL = 440mA Figure 2. OIP3; LSL = 45dBm, nominal = 47.6dBm
CPK = 5.73 Std Dev = 0.65
Std Dev = 0.097
30 30.5 31 31.5 32 32.5 33 40 45 50 55 60
Figure 3. P1dB; LSL = 30dBm, nominal = 31.6dBm Figure 4. PAE at P1dB; nominal = 52.5%
CPK = 4.21
Std Dev = 0.133
Notes:
5. Distribution data sample size is 500 samples taken from 3 different
wafers. T = 25C, Vdd = 5V, Vctrl = 5V, RF performance at 900MHz
A
unless otherwise specified. Future wafers allocated to this product
may have nominal values anywhere between the upper and lower
limits.
13.5 14 14.5 15 15.5 16 16.5 17 17.5
6. Measurements are made on a production test board. Input trace
Figure 5. Gain; LSL=13.7dB, Nominal = 15.6dB, USL=17.3dB
losses have not been de-embedded from actual measurements.
2