ALM-80210 0.25W Analog Variable Gain Amplier Data Sheet Description Features Avago Technologies ALM-80210 is a 0.25W Analog Con- Halogen free trolled Variable Gain Amplier which operates from 1.6GHz Wide Gain Control Range to 2.7GHz. The device provides an exceptionally high OIP3 High OIP3 across attenuation range level of 39.5dBm, which is maintained over a wide attenu- ation range. The device features wide gain control range, Specications low current, excellent input and output return loss. At 1.9GHz, V = 5V, I = 112mA (typ), V = 4V, V = 5V dd total bias ctrl The ALM-80210 is housed in a miniature 5.0X5.0X1.1 25C 3 mm , 10-lead multiple-chips-on-board (MCOB) module OIP3 = 40.5dBm package. This part is suitable for the AGC/Temperature compensation circuits application in wireless infrastruc- Noise Figure = 5.2dB ture such as Cellular/PCS/W-CDMA/WLLand and new gen- Gain = 9.8dB eration wireless technologies systems. P1dB = 23.2dBm Pin connections and Package Marking IRL = 13.6dB, ORL = 12.1dB Dynamic Range = 35dB Application 80210 CDMA, W-CDMA, WiMAX, LTE and other applications in the 1.6GHz to 2.7GHz range. WWYY XXXX Transmitter and Receiver Gain Control Temperature Compensation Circuitry Attention: Observe precautions for handling electrostatic sensitive devices. ESD Machine Model = 90 V ESD Human Body Model = 650 V Refer to Avago Application Note A004R: Electrostatic Discharge, Damage and Control. 6 RFout RFin 1 Note : Top View : Package marking provides orienation and identication 80210 = Device Code WWYY = Workweek and Year Code Figure 1. Simplied Schematic diagram XXXX = Assembly Lot number 7 Vctrl GND 5 8 GND GND 4 Vbias 3 9 EXT Lout Not used 2 10 Not used (1) ALM-80210 Absolute Maximum Rating T = 25C (2,3) C Thermal Resistance (V = 5.0V) = 70C/W d jc Symbol Parameter Units Absolute Maximum Notes: I Drain Current mA 140 d,max 1. Operation of this device in excess of any of these limits may cause permanent damage V Drain Voltage, V 5.5 d.,max 2. Derate 14.3mW/C for TL > 97C RF output to ground 3. Thermal resistance measured using 150C Infra-Red Microscopy Technique. V Control Voltage V 7 ctrl max 4. Max rating for Pin is under maximum V Biasing Voltage V 15 attenuation condition i.e. Vctrl = 1V. bias max P Power Dissipation mW 770 d (4) P CW RF Input Power dBm 25 in T Junction Temperature C 150 j (1) ALM-80210 Electrical Specication T = 25C, Z = 50 , V = 5.0V, V = 4V, V = 5V unless noted C o dd bias ctrl (4) Symbol Parameter and Test Condition Frequency Units Min. Typ. Max. stdev I Operating Amplier Current Range N/A mA 89 112 134 0.002 dd NF Noise Figure at minimal Attenuation 1.9GHz 5.2 5.9 0.088 2.1GHz dB 5.4 2.5GHz 5.7 Gain Gain at minimal Attenuation 1.9GHz 8.2 9.8 11.2 0.148 2.1GHz dB 9.7 2.5GHz 9.5 (2) OIP3 Output Third Order Intercept Point 1.9GHz 36 40.5 0.616 2.1GHz dBm 39.5 2.5GHz 39.8 P1dB Output Power at 1dB Gain Compression 1.9GHz 22 23.5 0.112 2.1GHz dBm 23..5 2.5GHz 23.3 IRL Input Return Loss 1.9GHz 13.6 2.1GHz dB 14.9 NA 2.5GHz 18.5 ORL Output Return Loss 1.9GHz 12.1 2.1GHz dB 14.3 NA 2.5GHz 14.8 ISO Isolation 1.9GHz 28.6 2.1GHz dB 27.7 NA 2.5GHz 26.7 Vbias Attenuator Bias Voltage N/A V 2.7 4 5 N/A Vctrl Gain Variation Control Voltage N/A V 1 5 NA Gain Gain Variation Range (from V =1V to 5V) 1.9GHz 35.0 ctrl 2.1GHz dB 35.1 NA 2.5GHz 34.3 Note : 1. Measurements obtained from a test circuit described in Figure 53. 2. OIP3 test condition: F1 F2 = 10MHz, with input power of -10dBm per tone measured at worst case side band. 3. Standard deviation data are based on at least 1000 pieces samples size taken from 2 wafer lots. Future wafers allocated to this product may have nominal values anywhere between the upper and lower specication limits. 2