ALM-31322 3.3 - 3.9 GHz 1-Watt High Linearity Amplifier Data Sheet Description Features Avago Technologies ALM-31322 is a high linearity 1 Watt Fully matched, input and output PA with good OIP3 performance and exceptionally good High linearity and P1dB PAE at P1dB gain compression point, achieved through Unconditionally stable across load condition the use of Avago Technologies proprietary 0.25um GaAs Enhancement-mode pHEMT process. Built-in adjustable temperature-compensated internal bias circuitry All matching components are fully integrated within the 1 GaAs E-pHEMT Technology module. This makes the ALM-31322 extremely easy to use. The adjustable temperature-compensated internal 5V supply bias circuit allows the device to be operated at either class Excellent uniformity in product specifications A or class AB operation. Tape-and-Reel packaging option available The ALM-31322 is housed inside a miniature 5.0 x 6.0 x 1.1 MSL-3 and Lead-free 3 mm 22-lead multiple-chips-on-board (MCOB) module package. High MTTF for base station application Specifications Component Image 3 3.5GHz 5V, 413mA (typical) 5.0 x 6.0 x 1.1 mm 22-lead MCOB 13.2 dB Gain 47.7 dBm Output IP3 19 21 22 17 18 20 GND GND 1 31 dBm Output Power at 1dB gain compression 2 RF OUT 16 NC 31322 51.5% PAE at P1dB 3 GND GND 15 WWYY 14 4 GND GND 2.8 dB Noise Figure 13 RF IN GND 5 XXXX Applications 6 10 9 8 7 GND 12 11 GND Class A driver amplifier for WiMAX Base Stations. General purpose gain block. Top View Bottom View Notes: Note: Package marking provides orientation and identification 1. Enhancement mode technology employs positive gate voltage, 31322 = Device Part Number thereby eliminating the need of negative gate voltage associated WWYY = Work week and Year of manufacture with conventional depletion mode devices. XXXX = Last 4 digit of Lot number Attention: Observe precautions for handling electrostatic sensitive devices. ESD Machine Model = 60 V ESD Human Body Model = 500 V Refer to Avago Application Note A004R: Electrostatic Discharge, Damage and Control. GND GND GND GND VDD2 VDD1 GND GND VCTRL NC GND GND GND GND 2 Absolute Maximum Rating T =25C A 3 Thermal Resistance = 27 C/W jc Symbol Parameter Units Absolute Max. (Vdd = 5V, Idd = 400mA, Tc = 85 C) V Device Voltage, RF output to ground V 5.5 dd Notes: I Device Drain Current mA 750 ds, max 2. Operation of this device in excess of any of V Control Voltage V 5.5 these limits may cause permanent damage. ctrl,max 3. Thermal resistance measured using Infra-Red P CW RF Input Power (Vdd=5.0, Vctrl=5V) dBm 25 in,max measurement technique. 4 P Total Power Dissipation W 4.125 diss 4. This is limited by maximum Vdd and Ids. Derate 37mW/ C for T >38.6C. o C T Junction Temperature C 150 j o T Storage Temperature C -65 to 150 STG 5, 6 Product Consistency Distribution Charts CPK = 1.09 CPK = 2.71 Std Dev = 20.3 Std Dev = 0.395 45 46 47 48 49 50 .34 .36 .38 .4 .42 .44 .46 .48 Figure 1. Ids LSL = 340mA, nominal = 413mA, USL = 480mA Figure 2. OIP3 LSL = 44.5dBm, nominal = 47.7dBm CPK = 3.31 Std Dev = 2.15 Std Dev = 0.147 29.5 30 30.5 31 31.5 32 32.5 33 42 44 46 48 50 52 54 56 58 60 Figure 3. P1dB LSL = 30dBm, nominal = 31dBm Figure 4. PAE at P1dB nominal = 51.5% CPK = 2.55 Std Dev = 0.02 Notes: 5. Distribution data sample size is 500 samples taken from 3 different wafer lots. T = 25C, Vdd = 5V, Vctrl = 5V, RF performance at 3.5GHz A unless otherwise specified. Future wafers allocated to this product may have nominal values anywhere between the upper and lower limits. 12 13 14 15 6. Measurements are made on a production test board. Input trace Figure 5. Gain LSL=11.7dB, Nominal = 13.2dB, USL=14.8dB losses have not been de-embedded from actual measurements. 2