SST12LP15A-QVCE Microchip

2.4 GHz High-Power and High-Gain Power Amplifier SST12LP15A SST-GP1215A2.4 GHz High Gain High Power PA Data Sheet FEATURES: High Gain: High-speed power-up/down Typically 32 dB gain across 2.42.5 GHz over Turn on/off time (10%-90%) <100 ns temperature 0C to +85C Typical power-up/down delay with driver delay included <200 ns High linear output power: High temperature stability >29 dBm P1dB - Please refer to Absolute Maximum Stress ~1 dB gain/power variation between 0C to +85C Ratings on page 4 ~1 dB detector variation over 0C to +85C Meets 802.11g OFDM ACPR requirement up to Low shut-down current (~1 A) 25 dBm On-chip power detection Added EVM~4% up to 23 dBm for 25 dB dynamic range on-chip power detection 54 Mbps 802.11g signal Meets 802.11b ACPR requirement up to 25 dBm Simple input/output matching High power-added efficiency/Low operating Packages available current for both 802.11g/b applications 16-contact VQFN (3mm x 3mm) ~26%/300 mA P = 24 dBm for 802.11g OUT All non-Pb (lead-free) devices are RoHS compliant ~27%/350 mA P = 25 dBm for 802.11b OUT Built-in Ultra-low I power-up/down control REF APPLICATIONS: I ~2 mA REF WLAN (IEEE 802.11g/b) Low idle current Home RF ~80 mA I CQ Cordless phones 2.4 GHz ISM wireless equipment PRODUCT DESCRIPTION The SST12LP15A is a high-power and high-gain power The power amplifier IC also features easy board-level amplifier based on the highly-reliable InGaP/GaAs HBT usage along with high-speed power-up/down control. Ultra- technology. low reference current (total I ~2 mA) makes the REF SST12LP15A controllable by an on/off switching signal The SST12LP15A can be easily configured for high-power directly from the baseband chip. These features coupled applications with superb power-added efficiency while with low operating current make the SST12LP15A ideal for operating over the 2.4-2.5 GHz frequency band. It typically the final stage power amplification in battery-powered provides 32 dB gain with 26% power-added efficiency 802.11g/b WLAN transmitter applications. P = 24 dBm for 802.11g and 27% power-added effi- OUT ciency P = 25 dBm for 802.11b. The SST12LP15A is offered in 16-contact VQFN package. OUT See Figure 2 for pin assignments and Table 1 for pin The SST12LP15A has excellent linearity, typically ~4% descriptions. added EVM at 23 dBm output power which is essential for 54 Mbps 802.11g operation while meeting 802.11g spec- trum mask at 25 dBm. SST12LP15A also has wide-range (>25 dB), temperature-stable (~1 dB over 85C), single- ended/differential power detectors which lower users cost on power control. 2006 Silicon Storage Technology, Inc. The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc. S71291-04-000 02/09 These specifications are subject to change without notice. 1Det ref VREF2 VREF1 VCCb 2.4 GHz High-Power and High-Gain Power Amplifier SST12LP15A Data Sheet FUNCTIONAL BLOCKS 16 15 14 13 NC 1 12 VCC3 RFIN 2 11 RFOUT RFIN 3 10 RFOUT Bias Circuit NC49 Det 56 7 8 1291 B1.0 FIGURE 1: Functional Block Diagram6 2006 Silicon Storage Technology, Inc. S71291-04-000 02/09 2 VCC1 NC VCC2 NC