SST12CP11-QVCE Microchip

2.4 GHz High-Power and High-Gain Power Amplifier SST12CP11 Data Sheet SST12CP11 is a high-power and high-gain power amplifier (PA) based on the highly-reliable InGaP/GaAs HBT technology.This PA can be easily configured for high-power applications with good power-added efficiency while operating over the 2.4-2.5 GHz frequency band. It can also be configured to operate at 1.8 GHz for Pico Cell applications. SST12CP11 typically provides 33 dB gain and has excellent linearity, typically ~3% EVM at 25 dBm output power at 54 Mbps 802.11g operation while meeting 802.11g spectrum mask at 28.5 dBm. The power amplifier IC includes an output power detector that has a wide dynamic range and is VSWR- insensitive. SST12CP11 features easy board-level usage along with high-speed power-up/-down control and is offered in 16-contact VQFN package. Features Applications High Gain: WLAN (IEEE 802.11b/g/n) Typically 33 dB gain across 2.42.5 GHz over tempera- AP router ture -40C to +85C WiMax (IEEE 802.16e) High linear output power: >30 dBm P1dB Home RF - Please refer to Absolute Maximum Stress Ratings on page 5 Cordless phones Meets 802.11g OFDM spectrum mask requirement up to 28.5 dBm 2.4 GHz ISM wireless equipment EVM~3% up to 25 dBm for 54 Mbps 802.11g signal 2.5% EVM up to 23.5 dBm, 802.11n, HT40 1.75% EVM up to 21.5 dBm, 802.11ac MCS8 1.8 GHz Pico Cell Meets 802.11b ACPR requirement up to 28.5 dBm High-speed power-up/down Turn on/off time (10%-90%) <100 ns 10:1 VSWR survivability (unconditionally stable up to 28.5 dBm) On-chip power detection 20 dB dynamic range VSWR- and temperature-insensitive Simple input/output matching Packages available 16-contact VQFN (3mm x 3mm) All non-Pb (lead-free) devices are RoHS compliant 2013 Silicon Storage Technology, Inc. www.microchip.com DS75054A 01/13 Microchip Proprietary Information2.4 GHz High-Power and High-Gain Power Amplifier SST12CP11 Data Sheet Product Description SST12CP11 is a high-power and high-gain power amplifier (PA) based on the highly-reliable InGaP/ GaAs HBT technology. This PA can be easily configured for high-power applications with high power-added efficiency while operating over the 2.4-2.5 GHz frequency band. It typically provides 33 dB gain with 15% power-added efficiency P = 25 dBm for 802.11g. OUT SST12CP11 has excellent linearity, typically 3% added EVM at 25 dBm output power with 54 Mbps 802.11g operation while meeting 802.11g spectrum mask at 28.5 dBm. SST12CP11 also has a single- ended power detector which lowers the users cost for power control. The power amplifier IC also features easy board-level usage along with high-speed power-up/-down control. SST12CP11 is offered in 16-contact VQFN package. See Figure 2 for pin assignments and Table 1 for pin descriptions. 2013 Silicon Storage Technology, Inc. DS75054A 01/13 2 Microchip Proprietary Information