XP1080-QU-0N0T MACOM

XP1080-QU Power Amplifier Rev. V2 37.0 - 40.0 GHz Functional Schematic Features Linear Power Amplifier PDA PDC NC NC VD1 VD2 VD3 On-Chip Power Detector Output Power Adjust 25.0 dB Small Signal Gain +27.0 dBm P1dB Compression Point +38.0 dBm OIP3 Lead-Free 7 mm 28-lead SMD Package RoHS* Compliant and 260C Reflow Compatible RF IN 1 9 RF OUT Description The XP1080-QU is a four stage 37.0-40.0 GHz packaged GaAs MMIC power amplifier that has a small signal gain of 25.0 dB with a +38.0 dBm Output Third Order Intercept. The amplifier contains an integrated, temperature compensated, on-chip power detector. This MMIC uses M/A-COM VG1 VG2 VG3 NC NC Vref Vdet Technology Solutions GaAs pHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and 1 Pin Configuration uniformity. Pin No. Function Pin No. Function The device comes in a RoHS compliant 7x7mm QFN Surface Mount Package offering excellent RF 1 RF Input 9 RF Output and thermal properties. This device has been Gate Bias, Drain Bias for designed for use in 38 GHz Point-to-Point 2 10 Stage 1 Stage 3 Microwave Radio applications. Gate Bias, Drain Bias for 3 11 Stage 2 Stage 2 Ordering Information Gate Bias, Drain Bias for 4 12 Part Number Package Stage 3 Stage 1 XP1080-QU-0N00 bulk quantity 5-6 Not Connected 13,14 Not Connected XP1080-QU-0N0T tape and reel Detector 7 15 PDC Reference Output XP1080-QU-EV1 evaluation module 8 Detector Output 16 PDA 1. The exposed pad centered on the package bottom must be connected to RF and DC ground. * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC. 1 M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. North America Tel: 800.366.2266 / Fax: 978.366.2266 Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 2 16 3 15 4 14 5 13 6 12 7 11 8 10XP1080-QU Power Amplifier Rev. V2 37.0 - 40.0 GHz Electrical Specifications: 37-40.15 GHz (Ambient Temperature T = 25C) Parameter Units Min. Typ. Max. Input Return Loss (S11) dB 10.0 14.0 - Output Return Loss (S22) dB 4.0 8.0 - Small Signal Gain (S21) dB 21.0 25.0 30.0 Gain Flatness (S21) dB - +/-1.0 - Reverse isolation (S12) dB - 50 - Output Power for 1dB Compression Point (P1dB) dBm - 27.0 - Output IMD3 with Pout (scl) = 14 dBm dBc 43.0 48.0 - Output IP3 dBm 35.5 +38.0 - Drain Bias Voltage (Vd) VDC - 4.0 4.0 Gate Bias Voltage (Vg) VDC -1.0 -0.3 -0.1 Supply Current (Id1) (Vd=4.0V, Vg=-0.3V) mA - 1000 1200 2,3 Absolute Maximum Ratings Recommended Layout Parameter Absolute Max. Supply Voltage (Vd) +4.3 V Gate Bias Voltage (Vg) 1.5 V < Vg < 0 V Input Power (Pin) 15 dBm Abs. Max Junction/Channel Temp MTTF Graph 1 Max. Operating Junction/Channel 175C Temp Continuous Power Dissipation (Pdiss) 7.0 W at 85 C Thermal Resistance (Tchannel=150C) 12C/W Operating Temperature (Ta) -40C to +85C Storage Temperature (Tstg) -65C to +150C See solder reflow Mounting Temperature profile ESD Min. - Machine Model (MM) Class A ESD Min. - Human Body Model (HBM) Class 1A MSL Level MSL3 2. Channel temperature directly affects a device s MTTF. Channel temperature should be kept as low as possible to maximize lifetime. 3. For saturated performance it recommended that the sum of (2*Vdd + abs (Vgg)) <9V 2 M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. North America Tel: 800.366.2266 / Fax: 978.366.2266 Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298