X-On Electronics has gained recognition as a prominent supplier of SST12CP33-QUCE RF Amplifier across the USA, India, Europe, Australia, and various other global locations. SST12CP33-QUCE RF Amplifier are a product manufactured by Microchip. We provide cost-effective solutions for RF Amplifier, ensuring timely deliveries around the world.

SST12CP33-QUCE Microchip

SST12CP33-QUCE electronic component of Microchip
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Part No.SST12CP33-QUCE
Manufacturer: Microchip
Category: RF Amplifier
Description: RF Amplifier WLAN 11b/g/n/256 QAM PA(Ultra Hi-Pwr)
Datasheet: SST12CP33-QUCE Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.0792 ea
Line Total: USD 1.08 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 01 Jan to Tue. 07 Jan
MOQ : 1
Multiples : 1
1 : USD 1.0792
25 : USD 0.9487
100 : USD 0.855

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Type
Technology
Operating Frequency
P1dB - Compression Point
Gain
Operating Supply Voltage
NF - Noise Figure
Minimum Operating Temperature
Maximum Operating Temperature
Operating Supply Current
Packaging
Amplifier Type
Brand
Number Of Channels
Development Kit
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SST12CP33-QUCE from our RF Amplifier category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SST12CP33-QUCE and other electronic components in the RF Amplifier category and beyond.

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SST12CP33 2.4 GHz WLAN Power Amplifier, 802.11b/g/n/256 QAM Features 1.0 PRODUCT DESCRIPTION High Gain: SST12CP33 is a high-power, high-gain, WLAN - Typically 38 dB gain across 2.42.5 GHz over 802.11b/g/n/256 QAM power amplifier (PA) based on the highly-reliable InGaP/GaAs HBT technology. temperature -40C to +85C Linear operation at both 3.3V and 5V This PA can be easily configured for high-power appli- cations with high power-added efficiency while operat- High linear output power at 5V: ing over the 2.4-2.5 GHz frequency band. It can - >30 dBm P1dB , and typically pro- operate at both 3.3V and 5V V CC - Meets 802.11b ACPR requirements up to 28 vides 38 dB gain with 25% power-added efficiency dBm with 30% power-added efficiency P = 28 dBm for 802.11g at 5V. OUT - Meets 802.11g OFDM spectrum mask require- ment up to 28 dBm SST12CP33 has excellent linearity, typically 25 dBm at - Typically 25 dBm with <3% EVM, 802.11g, 3% EVM with 54 Mbps 802.11g operation at 5V while meeting 802.11g spectrum mask at 28 dBm and 21 54 Mbps, 350 mA current - Typically 24 dBm with <2.5% EVM, 802.11n, dBm at 3% EVM at 3.3V bias. SST12CP33 also has a single-ended power detector which lowers the users MCS7-HT20, 50% duty cycle cost for power control. - Typically 23 dBm with <1.75% EVM, MCS9- VHT40, 50% duty cycle, 320 mA current The power amplifier IC also features easy board-level High linear output power at 3.3V: usage along with high-speed power-up/-down control. - Meets 802.11b ACPR requirements up to 25 SST12CP33 is offered in 16-contact UQFN package. dBm with 27% power-added efficiency See Figure 3-1 for pin assignments and Table 3-1 for - Typically 21 dBm with <3% EVM, 802.11g, 54 pin descriptions. Mbps, 240 mA current - Typically 20.5 dBm with <2.5% EVM, 802.11n, MCS7-HT20, 230 mA current - Typically 19 dBm with <1.75% EVM, MCS9- VHT40, 210 mA current High-speed power-up/down - Turn on/off time (10%-90%) <100 ns 10:1 VSWR survivability (unconditionally stable up to 28 dBm) On-chip power detection - >25 dB dynamic range, from 5 dBm to 30 dBm - VSWR- and temperature-insensitive Matched RF input/simple output matching Packages available - 16-contact UQFN (3mm x 3mm) All non-Pb (lead-free) devices are RoHS compliant Applications WLAN (IEEE 802.11b/g/n) WLAN 256 QAM AP router Cordless phones 2.4 GHz ISM wireless equipment 2015 Microchip Technology Inc. DS70005222B-page 1SST12CP33 TO OUR VALUED CUSTOMERS It is our intention to provide our valued customers with the best documentation possible to ensure successful use of your Microchip products. To this end, we will continue to improve our publications to better suit your needs. Our publications will be refined and enhanced as new volumes and updates are introduced. If you have any questions or comments regarding this publication, please contact the Marketing Communications Department via E- mail at docerrors microchip.com. We welcome your feedback. Most Current Data Sheet To obtain the most up-to-date version of this data sheet, please register at our Worldwide Web site at:

Tariff Desc

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M4S
M6S
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MCP
Micrel
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MICROCHIP (ATMEL)
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Microchip Technology Micrel
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MICROSEMI
Microsemi Analog Mixed Signal Group
Microsemi Analog Mixed Signal Group [MIL]
Microsemi Commercial Components Group
MICROSEMI COMMUNICATIONS INC.
Microsemi Consumer Medical Product Group
Microsemi Corporation
Microsemi FTD
Microsemi Power Management Group
Microsemi Power Products Group
Microsemi SoC
MICROSEMI/LAWRENCE
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MSC
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Silicon Storage
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VECTRON INTERNATIONAL
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