X-On Electronics has gained recognition as a prominent supplier of SST12LF09-Q3CE rf front end across the USA, India, Europe, Australia, and various other global locations. SST12LF09-Q3CE rf front end are a product manufactured by Microchip. We provide cost-effective solutions for rf front end, ensuring timely deliveries around the world.

SST12LF09-Q3CE Microchip

SST12LF09-Q3CE electronic component of Microchip
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See Product Specifications
Part No.SST12LF09-Q3CE
Manufacturer: Microchip
Category:RF Front End
Description: RF Front End WLAN 11b/g/n/ac FEM (PA+LNA+SP3T)
Datasheet: SST12LF09-Q3CE Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1
1 : USD 1.3882
10 : USD 1.1699
25 : USD 0.999
100 : USD 0.8934
N/A

Obsolete
0 - WHS 2

MOQ : 10
Multiples : 1
10 : USD 0.0004
N/A

Obsolete
   
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RoHS - XON
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Supply Current
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NF - Noise Figure
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SST12LF09 2.4 GHz High-Linearity, WLAN Front-End Module FEATURES APPLICATIONS Input/output ports internally matched to 50 and WLAN (IEEE 802.11b/g/n/256 QAM) DC decoupled Home RF Package available Cordless phones - 16-contact X2QFN 2.5mm x 2.5mmx 0.4mm 2.4 GHz ISM wireless equipment All non-Pb (lead-free) devices are RoHS compliant 1.0 PRODUCT DESCRIPTION Transmitter Chain SST12LF09 is a 2.4 GHz Front-end Module (FEM) Gain: designed in compliance with IEEE 802.11b/g/n and - Typically 24 dB gain 256 QAM applications. Based on GaAs pHEMT/HBT technology, it combines a high-performance transmitter Dynamic linear output power: power amplifier (PA), a low-noise receiver amplifier - Meets 802.11g OFDM ACPR requirement up to (LNA) and an antenna Tx/Rx/BT switch (SP3T SW). 21 dBm using 3.6V V and 22.5 dBm using CC The input/output RF ports are single-ended and inter- 5V V CC nally matched to 50 . These RF ports are DC decou- - 17 dBm using 3.6V, 18 dBm using 5.0V, at 3% pled, and require no DC-blocking capacitors or EVM for 802.11g, 54 Mbps matching components. This helps reduce the system - 15 dBm using 3.6V, 16 dBm using 5.0V, at board Bill of Materials (BOM) cost. 1.75% dynamic EVM for 256 QAM, 40 MHz bandwidth There are two components to the FEM: the Transmitter (TX) chain and the Receiver (RX) chain. Operating current - 150 mA P = 17 dBm for 802.11g, 3.6V The TX chain includes a high-efficiency PA based on OUT the InGaP/GaAs HBT technology. The transmitter is - 130 mA P = 15 dBm for MCS9, 3.6V OUT optimized for high linearity, 802.11n and 256 QAM PA Control current, I :<3 mA PEN operationtypically providing 15 dBm with 1.75% Idle current, I :90 mA (3.6V V ) CQ CC dynamic EVM for 256 QAM, 40 MHz operation and 17 Low shut-down current: ~2 A dBm at 3% for 802.11g, 54 Mbps operation at 3.6V. At Power-up/down control 5V V , the transmitter provides typically 17 dBm with CC - Turn on/off time (10%90%) <400 ns 1.75% dynamic EVM for 256 QAM, 40 MHz operation and 18 dBm at 3% for 802.11g, 54 Mbps operation. Limited variation over temperature - ~1 dB power variation between -40C to +85C SST12LF09 has a transmitter on-chip, single-ended power detector that is stable over temperature and Linear on-chip power detection insensitive to output VSWR. It features a wide - Load and temperature insensitive dynamic-range (20 dB) with dB-wise linear operation. - >20 dB dynamic range on-chip power detection The on-chip power detector provides a reliable solution to board-level power control. Receiver Chain The Rx chain provides typically 12 dB gain with 2.5 dB Gain: Typically 12 dB gain noise figure. With the LNA bypassed, the receiver loss Noise figure: Typically 2.5 dB is typically 9 dB. Receiver input P1dB: Typically -6 dBm SST12LF09 is offered in a 16-contact X2QFN package. LNA bypass loss: Typically 9 dB See Figure 3-1 for pin assignments and Table 4-1 for pin descriptions. Bluetooth Chain Loss: 1.6dB Output P1dB: >25 dBm 2013 Microchip Technology Inc. DS75083B-page 1SST12LF09 TO OUR VALUED CUSTOMERS It is our intention to provide our valued customers with the best documentation possible to ensure successful use of your Microchip products. To this end, we will continue to improve our publications to better suit your needs. Our publications will be refined and enhanced as new volumes and updates are introduced. If you have any questions or comments regarding this publication, please contact the Marketing Communications Department via E- mail at docerrors microchip.com. We welcome your feedback. Most Current Data Sheet To obtain the most up-to-date version of this data sheet, please register at our Worldwide Web site at:

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
ATM
Atmel
Atmel Wireless (VA)
M4S
M6S
M8S
M9S
MCP
Micrel
Micrel Inc
MICREL SEMICONDUCTOR
MICREL SYNERGY SEMI
MICROCHIP (ATMEL)
MICROCHIP (MICREL)
MICROCHIP (MICROSEMI)
MICROCHIP (SUPERTEX)
Microchip / Microsemi
Microchip / Vectron
Microchip Tech
MICROCHIP TECH.
Microchip Technology
Microchip Technology Micrel
Microchip Technology / Atmel
Microchip Technology / Micrel
MICROCHIPDIRECT
MICROSEMI
Microsemi Analog Mixed Signal Group
Microsemi Analog Mixed Signal Group [MIL]
Microsemi Commercial Components Group
MICROSEMI COMMUNICATIONS INC.
Microsemi Consumer Medical Product Group
Microsemi Corporation
Microsemi FTD
Microsemi Power Management Group
Microsemi Power Products Group
Microsemi SoC
MICROSEMI/LAWRENCE
MICROSEMI/LINFINITY
MSC
Roving Networks
ROVING NETWORKS INC
ROVING NETWORKS INC.
ROVING NETWORKS, INC.
Silicon Storage
SILICON STORAGE TECH
SILICON STORAGE TECHNOLOGY
Supertex
Vectron
VECTRON INTERNATIONAL
VECTRON INTL
Vitesse Microsemi
Vitesse / Microsemi

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