X-On Electronics has gained recognition as a prominent supplier of SST12LP07A-QXBE RF Amplifier across the USA, India, Europe, Australia, and various other global locations. SST12LP07A-QXBE RF Amplifier are a product manufactured by Microchip. We provide cost-effective solutions for RF Amplifier, ensuring timely deliveries around the world.

SST12LP07A-QXBE Microchip

SST12LP07A-QXBE electronic component of Microchip
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Part No.SST12LP07A-QXBE
Manufacturer: Microchip
Category: RF Amplifier
Description: Microchip Technology RF Amplifier 2.4-2.5GHz 3.3V 220mA ICC 802.11 bg
Datasheet: SST12LP07A-QXBE Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.7038 ea
Line Total: USD 0.7 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 01 Jan to Tue. 07 Jan
MOQ : 1
Multiples : 1
1 : USD 0.7038
25 : USD 0.5739
100 : USD 0.4919

0
Ship by Mon. 30 Dec to Wed. 01 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.8327

   
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We are delighted to provide the SST12LP07A-QXBE from our RF Amplifier category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SST12LP07A-QXBE and other electronic components in the RF Amplifier category and beyond.

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2.4 GHz High-Power, High-Gain Power Amplifier SST12LP07A A Microchip Technology Company Data Sheet The SST12LP07A is a versatile power amplifier based on the highly-reliable InGaP/ GaAs HBT technology. It is easily configured for high-power applications with excel- lent (30.8%) power-added efficiency, operating over the 2.4- 2.5 GHz frequency band and meeting 802.11 b/g spectrum mask at 23.5 dBm. The SST12LP07A has excellent linearity, typically ~2.5% added EVM at 20 dBm output power, which is essential for 54 Mbps 802.g/n operation. The Power Amplifier has an excellent on-chip, single-ended power detector, providing a reliable solution to board-level power control. The SST12LP07A is offered in a 12-contact XQFN package. Features High Gain: High temperature stability Typically 28 dB gain across 2.4~2.5 GHz over tempera- ~1 dB gain/power variation between 0C to +85C ture 0C to +85C Excellent On-chip power detection High linear output power: 20 dB dynamic range on-chip power detection >28 dBm P1dB - Please refer to Absolute Maximum Stress Ratings on Simple input/output matching page 5 Meets 802.11g OFDM ACPR requirement up to 23.5 dBm Packages available ~2.5% added EVM up to 20 dBm for 54 Mbps 802.11g signal 12-contact XQFN 2mm x 2mm Meets 802.11b ACPR requirement up to 24 dBm All non-Pb (lead-free) devices are RoHS compliant High power-added efficiency/Low operating cur- rent for both 802.11g/b applications ~30.8%/220 mA P = 23.5 dBm for both 802.11g OUT and 802.11b Applications Single-pin low I power-up/down control REF WLAN (IEEE 802.11g/b) I <2 mA REF Home RF Low idle current ~70 mA I CQ Cordless phones High-speed power-up/down 2.4 GHz ISM wireless equipment Turn on/off time (10%- 90%) <100 ns Typical power-up/down delay with driver delay included <200 ns 2012 Silicon Storage Technology, Inc. www.microchip.com DS75035B 05/12 PROPRIETARY AND CONFIDENTIAL2.4 GHz High-Power, High-Gain Power Amplifier SST12LP07A A Microchip Technology Company Data Sheet Product Description The SST12LP07A is a versatile power amplifier based on the highly-reliable InGaP/GaAs HBT tech- nology. The SST12LP07A can be easily configured for high-power applications with good power-added effi- ciency while operating over the 2.4- 2.5 GHz frequency band. It typically provides 28 dB gain with 30.8% power-added efficiency P = 23.5 dBm for both 802.11g and 802.11b. OUT The SST12LP07A has excellent linearity, typically ~2.5% added EVM at 20 dBm output power which is essential for 54 Mbps 802.11g operation while meeting 802.11g spectrum mask at 23.5 dBm. The SST12LP07A also features easy board-level usage along with high-speed power-up/down control through a single combined reference voltage pin. Ultra-low reference current (total I ~2 mA) makes REF the SST12LP07A controllable by an on/off switching signal directly from the baseband chip. These fea- tures coupled with low operating current make the SST12LP07A ideal for the final stage power amplifi- cation in battery-powered 802.11g/b WLAN transmitter applications. The SST12LP07A has an excellent on-chip, single-ended power detector, which features wide-range (>15 dB) with dB-wise linearization. The excellent on-chip power detector provides a reliable solution to board-level power control. The SST12LP07A is offered in 12-contact XQFN package. See Figure 2 for pin assignments and Table 1 for pin descriptions. 2012 Silicon Storage Technology, Inc. DS75035B 05/12 2 PROPRIETARY AND CONFIDENTIAL

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8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
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ATM
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Microsemi Analog Mixed Signal Group
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Supertex
Vectron
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