X-On Electronics has gained recognition as a prominent supplier of XP1043-QH-0G00 rf amplifier across the USA, India, Europe, Australia, and various other global locations. XP1043-QH-0G00 rf amplifier are a product manufactured by MACOM. We provide cost-effective solutions for rf amplifier, ensuring timely deliveries around the world.

XP1043-QH-0G00 MACOM

XP1043-QH-0G00 electronic component of MACOM
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Part No.XP1043-QH-0G00
Manufacturer: MACOM
Category:RF Amplifier
Description: RF Amp Chip Single Power Amp 16GHz 8V 24-Pin QFN EP Bulk
Datasheet: XP1043-QH-0G00 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3: USD 33 ea
Line Total: USD 99

Availability - 2520
Ships to you between
Mon. 10 Jun to Fri. 14 Jun
MOQ: 3  Multiples: 1
Pack Size: 1
Availability Price Quantity
2495 - WHS 1


Ships to you between Mon. 10 Jun to Fri. 14 Jun

MOQ : 3
Multiples : 1
3 : USD 37.375

     
Manufacturer
Product Category
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Operating Frequency
Operating Supply Voltage
Pd - Power Dissipation
Packaging
Number Of Channels
Operating Temp Range
Operating Temperature Classification
Rad Hardened
Operating Supply Voltage Min
Operating Supply Voltage Max
Pin Count
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We are delighted to provide the XP1043-QH-0G00 from our RF Amplifier category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the XP1043-QH-0G00 and other electronic components in the RF Amplifier category and beyond.

XP1043-QH Power Amplifier Rev. V1 12.0-16.0 GHz Features Functional Schematic nc GND GND VD1 VD2 VD3 32 dBm Saturated RF Power 41 dBm Output IP3 Linearity 17 dB Gain Control GND 1 18 GND On-Chip Power Detector GND 2 17 GND Lead-Free 4 mm 24-lead PQFN Package 3 16 nc nc 100% RF Testing RFIN 4 15 RFOUT RoHS* Compliant and 260C Reflow Compatible 5 14 GND nc GND 6 13 nc Description The XP1043-QH is a packaged linear power VG1 VG2 VG3 nc Vdet Vref amplifier that operates over the 12.0-16.0 GHz Pin Configuration frequency band. The device provides 21.5 dB gain and 41 dBm Output Third Order Intercept Point Pin No. Function Pin No. Function (OIP3) across the band and is offered in an industry standard, fully molded 4x4mm QFN package. The 1-2 Ground 13-14 Not Connected packaged amplifier is comprised of a three stage 3 Not Connected 15 RF Output power amplifier with an integrated, temperature 4 RF Input 16 Not Connected compensated on-chip power detector. The device includes on-chip ESD protection structures and DC 5-6 Ground 17-18 Ground by-pass capacitors to ease the implementation and 7 Gate 1 Bias 19 Drain 3 Bias volume assembly of the packaged part. The device is manufactured in GaAs pHEMT device technology 8 Gate 2 Bias 20 Drain 2 Bias with BCB wafer coating to enhance ruggedness and 9 Gate 3 Bias 21 Drain 1 Bias repeatability of performance. This device is specially 10 Not Connected 22-23 Ground designed for use in Point-to-Point Radio systems for cellular backhaul applications, and is well suited for 11 Pwr Det 24 Not Connected other telecom applications such as SATCOM and 12 Pwr Det Ref VSAT. 1,2 Absolute Maximum Ratings Parameter Absolute Max. Ordering Information Supply Voltage (Vd1,2,3) +8.0 V Part Number Package Supply Current (Id1,2,3) 1500 mA XP1043-QH-0G00 bulk quantity Gate Bias Voltage (Vg1,2,3) -2.4 V XP1043-QH-0G0T tape and reel Max Power Dissipation (Pdiss) 5.5W RF Input Power +19 dBm XP1043-QH-EV1 evaluation module Operating Temperature (Ta) -55 C to +85 C Storage Temperature (Tstg) -65 C to +150 C Channel Temperature (Tch) 165 C MSL Level (MSL) MSL3 ESD Min.-Machine Model (MM) Class A ESD Min.-Human Body Model (HBM) Class 1A (1) Minimum specifications are set under nominal (typ.) bias conditions. Bias can be adjusted higher to achieve greater linearity and power however, maximum total power dissipated is specified at 5.5 W (2) Channel temperature directly affects a devices MTTF. Channel temperature should be kept as low as possible to maximize lifetime. 1 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions North America Tel: 800.366.2266 Europe Tel: +353.21.244.6400 is considering for development. Performance is based on target specifications, simulated results, India Tel: +91.80.43537383 China Tel: +86.21.2407.1588 and/or prototype measurements. Commitment to develop is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. 7 24 8 23 9 22 10 21 11 20 12 19XP1043-QH Power Amplifier Rev. V1 12.0-16.0 GHz Electrical Specifications: 12.0-16.0 GHz (Ambient Temperature T = 25C) 3 Parameter Units Min. Typ. Max. Small Signal Gain (S21) dB 19.0 21.5 Input Return Loss (S11) dB 10.0 15.0 Output Return Loss (S22) dB 10.0 10.0 Reverse Isolation (S12) dB 55.0 P1dB dBm 30.0 Psat dBm 31.0 32.0 OIP3 at Pout = 18 dBm per Tone dBm 40.0 41.0 Power Detector Range dB - 37.0 - Drain Bias Voltage (Vd1,2,3) VDC 7.0 7.0 Detector Bias Voltage (Vdet,ref) VDC 5.0 Gate Bias Voltage (Vg1,2,3) VDC -2 -1.0 0.0 Supply Current (Id1) mA 100 200 Supply Current (Id2) mA 200 400 Supply Current (Id3) mA 400 800 3. Minimum specifications are set under nominal (typ.) bias conditions. Bias can be adjusted higher to achieve greater linearity and power. 2 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions North America Tel: 800.366.2266 Europe Tel: +353.21.244.6400 is considering for development. Performance is based on target specifications, simulated results, India Tel: +91.80.43537383 China Tel: +86.21.2407.1588 and/or prototype measurements. Commitment to develop is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice.

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
Aeroflex Metelics
M/A-COM
M/A-COM / TYCO
M/A-COM Technology Solutions
MA/COM
MACOM
Nitronex

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