5.1-5.9 GHz High-Linearity Power Amplifier SST11CP16 Data Sheet SST11CP16 is a versatile power amplifier based on the highly-reliable InGaP/ GaAs HBT technology. It is easily configured for high-linearity, high-efficiency applications, with superb power-added efficiency, while operating over operating over the 5.1-5.9 GHz frequency band. SST11CP16 has the excellent linearity required by the 802.11a/n/ac applications. SST11CP16 provides 19 dBm with less than 1.8% EVM using 802.11ac modulation, with 80 MHz bandwidths and 351 Mbps data rate. It meets 802.11a spectrum mask requirements at 25 dBm and 802.11n HT20 spectrum mask at 24.5 dBm. This power amplifier also fea- tures easy, board-level usage along with high-speed power-up/-down control through a single reference voltage pin. SST11CP16 is offered in a 16-contact XQFN package with 0.5mm maximum thickness. Features Applications Small package size WLAN (IEEE 802.11a/n/ac) 16-contact XQFN (3mm x 3mm x 0.5mm max thick- HyperLAN2 ness) Multimedia Operating voltage V = 5.0V CC High linear output power across 5.1-5.9 GHz 5V: 802.11a OFDM Spectrum mask compliant up to 25 dBm typically 802.11n HT20 OFDM Spectrum mask compliant up to 24.5 dBm typically 3% EVM up to 21.5 dBm, typically for 802.11a, 54 Mbps sig- nal 2.5% EVM up to 20 dBm, typically for 802.11n, MCS7, 40 MHz BW signal 1.8% EVM up to 19 dBm, typically for 802.11ac, MCS9, 80 MHz BW signal High power-added efficiency/low operating current for 54 Mbps 802.11a applications ~11% P = 23 dBm for 802.11a OFDM, 5V V OUT CC Gain: Typically 30 dB gain across band 5.1-5.9 GHz Idle current ~250 mA I CQ High speed power-up/-down Turn on/off time (10%~90%) <100 ns Low shut-down current (~1 A) On-chip power detection 20 dB linear dynamic range 50 on-chip input match and simple output match All lead-free devices are RoHS compliant 2013 Silicon Storage Technology, Inc. www.microchip.com DS70005050B 9/145.1-5.9 GHz High-Linearity Power Amplifier SST11CP16 Data Sheet Product Description SST11CP16 is a high-linearity power amplifier with low power consumption and is based on the highly- reliable InGaP/GaAs HBT technology. It can be easily configured for high-linearity, high-efficiency applications, with superb power-added efficiency, while operating over the 802.11a frequency band for U.S. and European markets (5.1-5.9 GHz). SST11CP16 has excellent linearity, typically ~3% added EVM at 21.5 dBm output power for 54 Mbps 802.11a operation, at 5.0V, while meeting 802.11a spectrum mask at 25 dBm. SST11CP16 provides 19 dBm with less than 1.8% EVM, using 802.11ac modulation with 80 MHz bandwidth and 351 Mbps data rate. This power amplifier also provides a wide dynamic-range, linear power detector that is temperature and VSWR insensitive. This integrated power detector can lower the cost of power control. The power amplifier IC also features easy board-level operation along with high-speed power-up/- down control. Low reference current (total I <8 mA) makes the SST11CP16 controllable by an on/off REF switching signal directly from the baseband chip. These features coupled with low operating current make the SST11CP16 ideal for the final stage power amplification in 802.11a/n/ac WLAN transmitter applications. The SST11CP16 is offered in 16-contact XQFN package with 0.5 mm maximum thickness. See Figure 2 for pin assignments and Table 1 for pin descriptions. 2013 Silicon Storage Technology, Inc. DS70005050B 9/14 2