CHA5115-99F RoHS COMPLIANT X-band Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA5115-99F is a monolithic two-stage Vg GaAs medium power amplifier designed for X-band applications. The MPA provides typically 28dBm output Vd1 Vd2 power associated to 37% power added efficiency at 3dB gain compression. IN OUT This device is manufactured using 0.25m Power pHEMT process, including, via holes through the substrate and air bridges. It is available in chip form. Main Features 44 PAE Pin=9dBm (3dB comp) 42 40 0.25m Power pHEMT Technology 38 36 Frequency band: 8-12GHz 34 Output power: 28dBm 3dBcomp 32 Pout Pin=9dBm (3dB comp) Linear gain: 23dB 30 28 High PAE: 37% 3dBcomp 26 Noise Factor: 5dB typ. LinearGain 24 Quiescent bias point: Vd=8V, Id=0.17A 22 20 Chip size: 2.37x1.82x0.07mm 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 Frequency (GHz) Main Characteristics Tamb =+25C, Vd =8V, Id (Quiescent) =170mA, Drain Pulse width =100s, Duty cycle = 20% Symbol Parameter Min Typ Max Unit Fop Operating frequency range 12 GHz 8 PAE P Power added efficiency 3dBcomp 37 % -3dB P Output power 3dBcomp 28 dBm -3dB Ref. : DSCHA51151070 - 11 Mar 11 1/10 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Dpartementale 128 - BP46 - 91401 Orsay Cedex France Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Pout (dBm) & PAE(%) & Gain(dB)CHA5115-99F X-band Medium Power Amplifier Main Characteristics on wafer Tamb =+25C, Vd =8V, Id (Quiescent) =170mA, Drain Pulse width =100s, Duty cycle = 20% Symbol Parameter Min Typ Max Unit Fop Operating frequency 8 12 GHz G Small signal gain 23 dB 10 dB RLin Input Return Loss RLout Output Return Loss 8 dB P Ouput power 1dBcomp 27 dBm -1dB P Output power 3dBcomp 28 dBm -3dB 37 % PAE P Power Added Efficiency 3dBcomp -3dB Id P Supply drain current 3dBcomp 250 mA -3dB 5 dB NF Noise Factor Vd1, Vd2, Vd3 8 V Drain supply voltage (1) Id Supply quiescent current 170 mA Vg Gate supply voltage -1 V (1) Parameter can be adjusted by tuning of Vg. (1) Absolute Maximum Ratings Tamb.= +25C Symbol Parameter Values Unit (2) Cmp Compression level 6 dB (3) Vd Supply voltage 9.5 V Id Supply quiescent current 240 mA Id sat Supply current in saturation 320 mA Vg Supply voltage -0.6 V Tj Maximum junction temperature 175 C Tstg Storage temperature range -55 to +150 C Top Operating temperature range -40 to +85 C (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) For higher compression the level limit can be increased by decreasing the voltage Vd using the rate 0.5V/dBcomp. (3) Without RF input power. Ref. : DSCHA51151070 - 11 Mar 11 2/10 Specifications subject to change without notice Route Dpartementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09