X-On Electronics has gained recognition as a prominent supplier of CHA5115-QDG RF Amplifier across the USA, India, Europe, Australia, and various other global locations. CHA5115-QDG RF Amplifier are a product manufactured by United Monolithic Semiconductors. We provide cost-effective solutions for RF Amplifier, ensuring timely deliveries around the world.

CHA5115-QDG United Monolithic Semiconductors

CHA5115-QDG electronic component of United Monolithic Semiconductors
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See Product Specifications
Part No.CHA5115-QDG
Manufacturer: United Monolithic Semiconductors
Category: RF Amplifier
Description: CHA5115QDG united monolithic amplifier rf integrated circuits ics semiconductors
Datasheet: CHA5115-QDG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2: USD 125.0235 ea
Line Total: USD 250.05 
Availability - 0
MOQ: 2  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 2
Multiples : 1
2 : USD 125.0235

   
Manufacturer
Product Category
RoHS - XON
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the CHA5115-QDG from our RF Amplifier category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CHA5115-QDG and other electronic components in the RF Amplifier category and beyond.

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CHA5115-99F RoHS COMPLIANT X-band Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA5115-99F is a monolithic two-stage Vg GaAs medium power amplifier designed for X-band applications. The MPA provides typically 28dBm output Vd1 Vd2 power associated to 37% power added efficiency at 3dB gain compression. IN OUT This device is manufactured using 0.25m Power pHEMT process, including, via holes through the substrate and air bridges. It is available in chip form. Main Features 44 PAE Pin=9dBm (3dB comp) 42 40 0.25m Power pHEMT Technology 38 36 Frequency band: 8-12GHz 34 Output power: 28dBm 3dBcomp 32 Pout Pin=9dBm (3dB comp) Linear gain: 23dB 30 28 High PAE: 37% 3dBcomp 26 Noise Factor: 5dB typ. LinearGain 24 Quiescent bias point: Vd=8V, Id=0.17A 22 20 Chip size: 2.37x1.82x0.07mm 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 Frequency (GHz) Main Characteristics Tamb =+25C, Vd =8V, Id (Quiescent) =170mA, Drain Pulse width =100s, Duty cycle = 20% Symbol Parameter Min Typ Max Unit Fop Operating frequency range 12 GHz 8 PAE P Power added efficiency 3dBcomp 37 % -3dB P Output power 3dBcomp 28 dBm -3dB Ref. : DSCHA51151070 - 11 Mar 11 1/10 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Dpartementale 128 - BP46 - 91401 Orsay Cedex France Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Pout (dBm) & PAE(%) & Gain(dB)CHA5115-99F X-band Medium Power Amplifier Main Characteristics on wafer Tamb =+25C, Vd =8V, Id (Quiescent) =170mA, Drain Pulse width =100s, Duty cycle = 20% Symbol Parameter Min Typ Max Unit Fop Operating frequency 8 12 GHz G Small signal gain 23 dB 10 dB RLin Input Return Loss RLout Output Return Loss 8 dB P Ouput power 1dBcomp 27 dBm -1dB P Output power 3dBcomp 28 dBm -3dB 37 % PAE P Power Added Efficiency 3dBcomp -3dB Id P Supply drain current 3dBcomp 250 mA -3dB 5 dB NF Noise Factor Vd1, Vd2, Vd3 8 V Drain supply voltage (1) Id Supply quiescent current 170 mA Vg Gate supply voltage -1 V (1) Parameter can be adjusted by tuning of Vg. (1) Absolute Maximum Ratings Tamb.= +25C Symbol Parameter Values Unit (2) Cmp Compression level 6 dB (3) Vd Supply voltage 9.5 V Id Supply quiescent current 240 mA Id sat Supply current in saturation 320 mA Vg Supply voltage -0.6 V Tj Maximum junction temperature 175 C Tstg Storage temperature range -55 to +150 C Top Operating temperature range -40 to +85 C (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) For higher compression the level limit can be increased by decreasing the voltage Vd using the rate 0.5V/dBcomp. (3) Without RF input power. Ref. : DSCHA51151070 - 11 Mar 11 2/10 Specifications subject to change without notice Route Dpartementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
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