CHA3688aQDG RoHS COMPLIANT 12.5-30GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA3688aQDG is a three-stage self-biased wide band monolithic low noise amplifier monolithic circuit. UMS UMSUMSUMSUMSUMSUMS The circuit is manufactured with a pHEMT A3688A A3667AA3688AA3667AA3667AA3688AA3667A process, 0.25m gate length, via holes YYWW YYWWGYYWWGYYWWGYYWWGYYWWGYYWWG through the substrate, air bridges and electron beam gate lithography. It is supplied in RoHS compliant SMD package. Main Features Broadband performances: 12.5-30GHz 2.1dB noise figure 26dB gain 26dBm Output IP3 DC bias: Vd = 4V Id = 85 / 115mA 24L-QFN4x4 MSL1 Main Characteristics Tamb.= +25C Symbol Parameter Min Typ Max Unit Freq Frequency range 12.5 30 GHz Gain Linear Gain 21 26 dB NF Noise Figure 2.1 2.5 dB OIP3 3rd order intercept point (16 - 30GHz) 24 26 dBm Ref. : DSCHA3688aQDG1035 - 07 Feb 11 1/18 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Dpartementale 128 - BP46 - 91401 Orsay Cedex France Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 CHA3688aQDG 12.5-30GHz Low Noise Amplifier Main Characteristics (low current configuration) Tamb = +25C, Vd1=Vd2=Vd3= +4V and Pads B, D not connected Symbol Parameter Min Typ Max Unit Freq Frequency range 12.5 30 GHz Gain Linear Gain (12.5 - 24GHz) 22 25 dB Linear Gain (24.5 - 30GHz) 20 23 dB G Gain flatness (12.5 - 24GHz) 1.5 dB Gain flatness (24.5 - 30GHz) 2 dB NF Noise figure (12.5 - 16GHz) 2.3 2.6 dB Noise figure (16.5 - 24GHz) 2.0 2.3 dB Noise figure (24.5 - 30GHz) 2.2 2.5 dB S11 Input return loss (12.5 - 16GHz) (27 30GHz) 2.5:1 3.0:1 dB Input return loss (16.5 - 26.5GHz) 2.0:1 2.5:1 dB S22 Output return loss 2.0:1 2.5:1 dB OIP3 3rd order intercept point Pout SCL < 8dBm 23 25 dBm from 16 to 30GHz P1dB Output power at 1dB gain compression 13 14 dBm Id Drain bias current 85 115 mA Vd Drain bias voltage 4 V These values are representative of onboard measurements as defined on the drawing in paragraphEvaluation mother boar. Main Characteristics (high current configuration) Tamb = +25C, Vd1=Vd2=Vd3= +4V and Pads B, D Grounded Symbol Parameter Min Typ Max Unit Freq Frequency range 12.5 30 GHz Gain Linear Gain (12.5 - 24GHz) 23 26 dB Linear Gain (24.5 - 30GHz) 21 24 dB G Gain flatness 2 dB NF Noise figure (12.5 - 16GHz) 2.3 2.6 dB Noise figure (16.5 - 24GHz) 2.0 2.3 dB Noise figure (24.5 - 30GHz) 2.2 2.5 dB S11 Input return loss (12.5 - 16GHz) (27 30GHz) 2.5:1 3.0:1 dB Input return loss (16.5 - 26.5GHz) 2.0:1 2.5:1 dB S22 Output return loss 2.0:1 2.5:1 dB 3rd order intercept point Pout SCL < 8dBm OIP3 24 26 dBm from 16 to 30GHz P1dB Output power at 1dB gain compression 14 15 dBm Id Drain bias current 115 150 mA Vd Drain bias voltage 4 V These values are representative of onboard measurements as defined on the drawing in paragraphEvaluation mother boar. Ref. : DSCHA3688aQDG1035 - 07 Feb 11 2/18 Specifications subject to change without notice Route Dpartementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09