CHA2069-QDG 18-31GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA2069-QDG is a three-stage self- biased wide band monolithic low noise amplifier. Typical applications range from UMS telecommunication (point to point, point to A2069 multi-point, VSAT) to ISM and military YYWW markets. The circuit is manufactured with a standard pHEMT process: 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in lead-free SMD package. Gain and NF high current configuration Main Features (BCF grounded) Gain and NF low current config. (BDE grounded) 26 Broadband performance 18-31GHz 24 3dB noise figure 22 20 20dB gain S21 18 16 65mA low DC power consumption 14 20dBm 3rd order intercept point (high 12 10 current configuration) 8 24L-QFN4x4 SMD package 6 NF MSL Level: 1 4 2 0 10 12 14 16 18 20 22 24 26 28 30 32 Frequency (GHz) Main Characteristics Tamb = +25C, Vd = +4,5V Pads: B, C, F = GND (High current configuration) Symbol Parameter Min Typ Max Unit NF Noise figure 3 4.5 dB G Gain 17 20 dB 3rd order intercept point (Pout/tone=-5dBm) IP3 18 20 dBm 18-26GHz ESD protections: electrostatic discharge sensitive device observe handling precautions Ref. : DSCHA2069-QDG4056 - 25 Feb 14 1/16 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Bt. Charmille - Parc SILIC - 10, Avenue du Qubec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 Gain & NF (dB)CHA2069-QDG 18-31GHz Low Noise Amplifier Electrical Characteristics (low current configuration) Tamb = +25C, Vd = +4.5V, pads: B, D, E = GND Symbol Parameter Min Typ Max Unit Fop Operating frequency range 18 31 GHz G Gain 16.5 19.5 dB G Gain flatness 2 2.5 dB NF Noise figure 3 4.5 dB IS11I Input return loss -5 -2 dB IS22I Output return loss -7 -2.5 dB IP3 3rd order intercept point (Pout/tone=-5dBm) 16.5 18.5 dBm 18-26GHz P1dB Output power at 1dB gain compression 9.0 10.5 dBm Id Drain bias current 65 mA These values are representative of onboard measurements as defined on the drawing in paragraphEvaluation mother boar. Performances can be optimized thanks to external matching (refer to sub-hand enhancement paragraph). Electrical Characteristics (high current configuration) Tamb = +25C, Vd = +4.5V, pads: B, C, F = GND Symbol Parameter Min Typ Max Unit 18 31 Fop Operating frequency range GHz 17 20 G Gain dB 2 2.5 Gain flatness dB G 3 4.5 NF Noise figure dB -5 -2 IS11I Input return loss dB -7 -2.5 IS22I Ouput return loss dB 18 20 IP3 3rd order intercept point (Pout/tone=-5dBm) dBm 18-26GHz 12 13.5 P1dB Output power at 1dB gain compression dBm 85 Id Drain bias current mA Ref. : DSCHA2069-QDG4056 - 25 Feb 14 2/16 Specifications subject to change without notice Bt. Charmille - Parc SILIC - 10, Avenue du Qubec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34