CHA3665-QAG United Monolithic Semiconductors

UMSUMSUMSUMSUMSUMS A3688AA3667AA3667AA3688AA3667AA3667A YYWWGYYWWGYYWWGYYWWGYYWWGYYWWG CHA3664-QAG RoHS COMPLIANT 5-21GHz Driver Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA3664-QAG is a two-stage self-biased general purpose monolithic medium power amplifier. UMSUMSUMSUMSUMSUMS UMS UMSUMSUMSUMSUMSUMS The circuit is manufactured with a power A3664 A3688AA3667AA3667AA3688AA3667AA3667A A3667AA3667AA3667AA3667AA3688AA3688A pHEMT process: 0.25m gate length, via holes YYWW YYWWGYYWWGYYWWGYYWWGYYWWGYYWWG through the substrate, air bridges and electron YYWWGYYWWGYYWWGYYWWGYYWWGYYWWG beam gate lithography. It is available in leadless SMD package. Main Features Broadband performances: 5-21GHz 20.5dBm saturated output power 15dB gain DC bias: Vd=5Volt Id=120mA 16L-QFN3x3 MSL1 Main Characteristics Tamb = +25C, Vd = +5.0V Symbol Parameter Min Typ Max Unit Fop Operating frequency range 5 21 GHz G Small signal gain 12.5 15 dB Psat Saturated Output Power 19 20.5 dBm Id small signal Bias current 120 mA ESD Protections: Electrostatic discharge sensitive device observe handling precautions Ref. : DSCHA3664-QAG1263 - 20 Sep 11 1/10 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Dpartementale 128 - BP46 - 91401 Orsay Cedex France Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 UMSUMSUMSUMSUMSUMS A3688AA3667AA3667AA3667AA3688AA3667A YYWWGYYWWGYYWWGYYWWGYYWWGYYWWG UMSUMSUMSUMSUMSUMS A3667AA3667AA3667AA3688AA3667AA3688A YYWWGYYWWGYYWWGYYWWGYYWWGYYWWG5-21GHz Driver Amplifier CHA3664-QAG Electrical Characteristics Tamb = +25C, Vd= +5.0V Symbol Parameter Min Typ Max Unit Fop Operating frequency range 5 21 GHz G Small signal gain 12.5 15 dB P1dB CW output power at 1dB compression 17.5 19.5 dBm Psat Saturated Output Power 19 20.5 dBm C/I3 C/I3 Pin/tone=-8dBm , Vd=5V 5 to 7.5GHz 40 7.5 to 16.5GHz 34 dB 16.5 to 20GHz 33 dBS11 Input Return Loss -8 -6 dB dBS22 Output Return Loss -10 -8 dB NF Noise figure 6 dB Vd Drain Supply Voltage 5 V Id small signal Bias current 120 mA These values are representative of onboard measurements as defined on the drawing 96272 (see below). Absolute Maximum Ratings (1) Tamb = +25C Symbol Parameter Values Unit Vds Drain bias voltage small signal 6.0 V Ids Drain bias current small signal 175 mA Vg Gate bias voltage -2 to +0.4 V Ig Gate bias current 0.7 mA Vgd Maximum negative gate drain Voltage (Vg-Vd) -8 V Pin Maximum continuous input power +10 dBm Ta Operating temperature range -40 to +85 C Tj Junction temperature 175 C Tstg Storage temperature range -55 to +150 C (1) Operation of this device above anyone of these paramaters may cause permanent damage. Ref. : DSCHA3664-QAG1263 - 20 Sep 11 2/10 Specifications subject to change without notice Route Dpartementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09