CHE1260-QAG RoHS COMPLIANT 10-27GHz Bidirectionnal Detector GaAs Monolithic Microwave IC in SMD leadless package Description UMS The CHE1260-QAG is a bidirectionnal E1260 detector that integrates a passive YYWW bidirectionnal coupler, two matched detector diodes and two reference diodes. It allows the measurement of transmitted VVVVrrrreeeeffff RRRR VVVVddddeeeetttt RRRR DDDDCCCC RRRR and reflected power. It is designed for a wide range of applications where an accurate transmitted power control is required, typically commercial communication RRRRFFFF iiiinnnn RRRRFFFF oooouuuutttt systems. The circuit is manufactured with a Schottky diode MMIC process, 1m gate length, via holes through the substrate and air bridges. VVVVddddeeeetttt IIII VVVVrrrreeeeffff IIII DDDDCCCC IIII It is supplied in leadless SMD package. 10GHz 12GHz Main Features 17GHz 22GHz 27GHz Wide frequency range 10-27GHz Bidirectionnal detection 30dB dynamic range ESD protected 16L-QFN3x3 SMD package MSL1 Main Characteristics Tamb = +25C, VDC = +4.5V (on DC I and DC R) Symbol Parameter Min Typ Max Unit F Frequency range 10 27 GHz IL Insertion Loss 1 dB Dr Dynamic Range 15 dB ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions Ref : DSCHE1260QAG0200 - 19 Jul 10 1/14 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Dpartementale 128 - B.P.46 - 91401 Orsay Cedex France Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 10-27GHz Detector CHE1260-QAG Electrical Characteristics Tamb = +25C, VDC = +4.5V (on DC I and DC R) Symbol Parameter Min Typ Max Unit F Frequency range 10 27 GHz IL Insertion Loss 1 dB Cd Coupler Directivity 15 dB Dr Dynamic Range : 10 - 12GHz 15 dB 12 - 24GHz 8 dB 24 - 27GHz 15 dB Pd Power detection : 10 - 17GHz -1 dBm 17 - 21GHz -3 dBm 21 - 24GHz -6 dBm 24 - 27GHz -8 dBm Vdetect I Voltage detection from transmitted power Vref R Vdet I 20 3500 mV From Pd min to Pd max Vdetect R Voltage detection from reflected power Vref I Vdet R 20 3500 mV From Pd min to Pd max RLin Input return loss -12 -9 dB RLout Output return loss -12 -9 dB VDC Bias Voltage 4.5 V IDC Bias Current (on ports DC I or DC R) 25 33 45 A These values are representative of on board measurements as defined in notes, with 100k resistor in parallel on pads Vdet I, Vref I, Vdet R and Vref R (see notes). Absolute Maximum Ratings (1) Tamb = +25C Symbol Parameter Values Unit VDC Bias voltage (on ports DC I and DC R) 6 V Top Operating temperature range -40 to +85 C Tstg Storage temperature range -55 to +125 C Maximum power P max 30 dBm (for transmitted and/or reflected power) (1) Operation of this device above anyone of these paramaters may cause permanent damage. Thermal datas: Pdc max = 50A x 1V = 50W and PRF max = 20mW Tj max = 175C for maximum ratings Ref. : DSCHE1260QAG0200 - 19 Jul 10 2/14 Specifications subject to change without notice Route Dpartementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09