HMC816LP4E v00.1108 SMT GaAs pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 230 - 660 MHz 7 Features Typical Applications The HmC816lp 4e is ideal for: l ow Noise f igure: 0.5 dB Cellular/3G and l Te /w imAX/4G High Gain: 22 dB BTs & infrastructure High o utput ip3: +37 dBm r epeaters and f emtocells s ingle s upply: +3V to +5V public s afety r adio 50 o hm matched input/o utput multi-Channel Applications 2 24 l ead 4x4mm Qf N package: 16 mm Functional Diagram General Description The HmC816lp 4e is a GaAs pHemT Dual Channel l ow Noise Amplifier that is ideal for Cellular/3G and l Te /w imAX/4G basestation front-end receivers operating between 230 and 660 mHz. The amplifier has been optimized to provide 0.5 dB noise figure, 22 dB gain and +37 dBm output ip 3 from a single supply of +5V. input and output return losses are excellent with minimal external matching and bias decoupling components. The HmC816lp 4e shares the same package and pinout with the HmC817- lp 4e & HmC818lp 4e l NAs. The HmC817lp 4e can be biased with +3V to +5V and features an externally adjustable supply current which allows the designer to tailor the linearity performance of each channel of the l NA for each application. Electrical Specifications, T = +25 C, A Rbias 1, 2 = 10k Ohms*, Vdd = Vdd1, Vdd2 = +5V, Idd = Idd1, Idd2 Vdd = +3V Vdd = +5V parameter Units min. Typ. max. min. Typ. max. min. Typ. max. min. Typ. max. f requency r ange 230 - 450 450 - 660 230 - 450 450 - 660 mHz Gain 17 21 14 17 19 22 15 19 dB Gain Variation o ver Temperature 0.001 0.002 0.005 0.007 dB/ C Noise f igure 0.5 0.9 0.5 0.9 0.5 0.9 0.5 0.9 dB input r eturn l oss 13 17 15 16 dB o utput r eturn l oss 12 10 13 10 dB o utput power for 1 dB 10 14 13 16 15 19 18 21 dBm Compression (p1dB) s aturated o utput power (psat) 10 15 14 16.5 16 20 18 21 dBm o utput Third o rder intercept (ip 3) 26 28 34 37 dBm s upply Current (idd) 24 34 44 24 34 44 68 97 126 68 97 126 mA * r bias sets current, see application circuit herein For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 7 - 1 Application Support: Phone: 978-250-3343 or apps hittite.com OBSOLETE Amplifiers - l ow N oise - s mTHMC816LP4E v00.1108 SMT GaAs pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 230 - 660 MHz 7 1 Broadband Gain & Return Loss Gain vs. Temperature 25 24 20 S21 15 22 10 Vdd= 5V Vdd= 3V 5 20 0 S22 -5 18 -10 +25C +85C -15 16 - 40C -20 S11 -25 14 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 0.65 0.7 0.2 0.4 0.6 0.8 1 1.2 1.4 FREQUENCY (GHz) FREQUENCY (GHz) 2 1 Gain vs. Temperature Input Return Loss vs. Temperature 24 0 22 +25C -5 +85C - 40C 20 -10 18 +25C -15 +85C 16 - 40C 14 -20 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 0.65 0.7 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 0.65 0.7 FREQUENCY (GHz) FREQUENCY (GHz) 1 1 Reverse Isolation vs. Temperature Output Return Loss vs. Temperature 0 0 -5 +25C -5 -10 +85C +25C - 40C +85C - 40C -15 -10 -20 -25 -15 -30 -35 -20 -40 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 0.65 0.7 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 0.65 0.7 FREQUENCY (GHz) FREQUENCY (GHz) 1 Vdd = 5V 2 Vdd = 3V For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 7 - 2 Application Support: Phone: 978-250-3343 or apps hittite.com OBSOLETE RETURN LOSS (dB) GAIN (dB) RESPONSE (dB) REVERSE ISOLATION (dB) RETURN LOSS (dB) GAIN (dB) Amplifiers - l o w Noise - sm T