TQP3M9006-PCB Qorvo

TQP3M9006 High Linearity LNA Gain Block Applications Repeaters Mobile Infrastructure LTE / WCDMA / CDMA / EDGE General Purpose Wireless 16-Pin 3x3mm QFN Package Product Features Functional Block Diagram 5004000MHz Pin 1 Reference Mark 13.5dB Gain at 1.9GHz 16 15 14 13 1.0dB Noise Figure at 1.9 GHz 1 12 +38.5 dBm Output IP3 +22.4 dBm P1dB 2 11 50Ohm Cascadable Gain Block 3 10 Unconditionally Stable High Input Power Capability 4 9 +5V Single Supply, 90mA Current 5 6 7 8 3x3mm QFN Package Backside Paddle - RF/DC GND General Description Pin Configuration The TQP3M9006 is a high linearity low noise gain block Pin No. Label amplifier in a low-cost surface-mount package. At 2 RF Input 1.9GHz, the amplifier typically provides 13.5dB gain, 11 RF Output / VDD +38.5dBm OIP3, and 1.2dB Noise Figure while only All Other Pins N/C or GND drawing 90mA current. The device is housed in a Backside Paddle GND leadfree/green/RoHS-compliantindustry-standard 16-pin 3x3mm QFN package. The TQP3M9006 has the benefit of having high linearity while also providing very low noise across a broad range of frequencies. This allows the device to be used in both receive and transmit chains for high performance systems. The amplifier is internally matched using a high performance E-pHEMT process and only requires an external RF choke and blocking/bypass capacitors for operation from a single +5V supply. The internal active bias circuit also enables stable operation over bias and Ordering Information temperature variations. Part No. Description TQP3M9006 High Linearity LNA Gain Block The TQP3M9006 covers the 0.54GHz frequency band and is targeted for wireless infrastructure or other TQP3M9006-PCB 0.54 GHz Evaluation Board applications requiring high linearity and/or low noise Standard T/R size = 2500 pieces on a 7 reel figure. Datasheet: Rev D 10-19-15 Disclaimer: Subject to change without notice - 1 of 9 - 2015 TriQuint Semiconductor, Inc www.triquint.com / www.qorvo.com TQP3M9006 High Linearity LNA Gain Block Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Min Typ Max Units Storage Temperature 55 to 150C Device Voltage (V ) +3.0 +5.0 +5.25 V DD RF Input Power, CW, 50, T=25 C +20 dBm T 40 +85 C CASE 6 Device Voltage (V ) +7 V Tj for >10 hours MTTF +190 C DD Electrical specifications are measured at specified test Operation of this device outside the parameter ranges conditions. Specifications are not guaranteed over all given above may cause permanent damage. recommended operating conditions. Electrical Specifications Test conditions unless otherwise noted: VDD=+5V, Temp=+25C, 50 system Parameter Conditions Min Typ Max Units Operational Frequency Range 500 4000 MHz Test Frequency 1900 MHz Gain 12 13.5 15 dB Input Return Loss 13 dB 19 Output Return Loss dB Output P1dB +22.4 dBm +35 +38.5 Output IP3 See Note 1. dBm Noise Figure 1.0 dB Current, IDD 68 90 112 mA Thermal Resistance, Junction to case 54.5 C/W jc Notes: 1. OIP3 is measured with two tones at an output power of 4dBm / tone separated by 1MHz. The suppression on the largest IM3 product is used to calculate the OIP3 using 2:1 rule. 2:1 rule gives relative value with respect to fundamental tone. Datasheet: Rev D 10-19-15 Disclaimer: Subject to change without notice - 2 of 9 - 2015 TriQuint Semiconductor, Inc www.triquint.com / www.qorvo.com