TQP3M9009 High Linearity LNA Gain Block General Description The TQP3M9009 is a cascade-able, high linearity gain block amplifier in a low-cost surface-mount package. At 3-pin SOT-89 Package 1.9GHz, the amplifier is targeted to provide 21.8dB gain, +39.5dBm OIP3, and 1.3dB Noise Figure while only drawing 125mA current. The device is housed in a leadfree/green/RoHS-compliant industry-standard SOT-89 package. Product Features 504000MHz The TQP3M9009 has the benefit of having high gain across 21.8dB Gain At 1.9GHz a broad range of frequencies while also providing very low noise. This allows the device to be used in both receiver +39.5dBm Output IP3 and transmitter chains for high performance systems. The 1.3 dB Noise Figure At 1.9GHz amplifier is internally matched using a high performance E- 50 Ohm Cascade-able Gain Block pHEMT process and only requires an external RF choke Unconditionally Stable and blocking/bypass capacitors for operation from a single High input power capability +5V supply. The internal active bias circuit also enables +5V Single Supply, 125 mA Current stable operation over bias and temperature variations. SOT-89 Package The TQP3M9009 covers the 0.054GHz frequency band and is targeted for wireless infrastructure or other applications requiring high linearity and/or low noise figure. Applications Repeaters Mobile Infrastructure LTE/ WCDMA / EDGE / CDMA General Purpose Wireless Functional Block Diagram GND 4 Ordering Information 1 2 3 Part No. Description RF IN GND RF OUT TQP3M9009 High Linearity LNA Gain Block TQP3M9009-PCB IF 0.050.5GHz Evaluation Board TQP3M9009-PCB RF 0.54GHz Evaluation Board Standard T/R size = 1000 pieces on a 7 reel Datasheet, Rev O, November 4, 2021 Subject to change without notice 1 of 12 www.qorvo.com TQP3M9009 High Linearity LNA Gain Block Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Min Typ Max Units Storage Temperature 65 to +150C Device Voltage (VDD) +3.0 +5.0 +5.25 V RF Input Power, CW, 50, T=25 C +23dBm T -40 +105 C CASE Device Voltage (VDD) +7 V 6 Tj for >10 hours MTTF +190 C Reverse Device Voltage 0.3 V Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. conditions. Application of conditions to the device outside the Recommended Operating Conditions may reduce device reliability and performance. Electrical Specifications Test conditions unless otherwise noted: VDD=+5V, Temp=+25C, 50 system Parameter Conditions Min Typ Max Units Operational Frequency Range 50 4000 MHz Test Frequency 1900 MHz Gain 20 21.8 23 dB Input Return Loss 13 dB Output Return Loss 14 dB Output P1dB +22 dBm Output IP3 Pout=+3dBm/tone, f=1MHz +36.5 +39.5 dBm Noise Figure 1.3 dB Current, IDD 125 150 mA Thermal Resistance, Junction to case 34 C/W jc Datasheet, Rev O, November 4, 2021 Subject to change without notice 2 of 12 www.qorvo.com