TQP7M9102 1/2 W High Linearity Amplifier General Description The TQP7M9102 is a high linearity driver amplifier in a low-cost, RoHS compliant, surface mount package. This InGaP/GaAs HBT delivers high performance 3 Pin SOT-89 Package across a broad range of frequencies with +44 dBm OIP3 and +27.5 dBm P1dB while only consuming 135 mA quiescent current. All devices are 100% RF and DC Product Features tested. 4005000MHz The TQP7M9102 incorporates on-chip features that +27.5dBm P1dB differentiate it from other products in the market. The +44dBm Output IP3 amplifier integrates an on-chip DC over-voltage and RF over-drive protection. This protects the amplifier from 17.8dB Gain at 2140MHz electrical DC voltage surges and high input RF input power +5V Single Supply, 135mA Current levels that may occur in a system. On-chip ESD protection Internal RF Overdrive Protection allows the amplifier to have a very robust Class 2 HBM ESD Internal DC Overvoltage Protection rating. On-Chip ESD Protection The TQP7M9102 is targeted for use as a driver amplifier in SOT-89 Package wireless infrastructure where high linearity, medium power, and high efficiency are required. The device an excellent candidate for transceiver line cards in current and next generation multi-carrier 3G / 4G base stations. Applications Repeaters Mobile Infrastructure CDMA / WCDMA / LTE Functional Block Diagram General Purpose Wireless Backside Paddle - GND Ordering Information 1 2 3 RF IN GND RF OUT / V CC Part No. Description TQP7M9102 0.5 W High Linearity Amplifier Top View TQP7M9102-PCB900 869960 MHz Evaluation Board TQP7M9102-PCB2140 2.112.17 GHz Evaluation Board TQP7M9102-PCB2600 2.52.7 GHz Evaluation Board Standard T/R size = 1000 pieces on a 7 reel Datasheet, May 21, 2021 Subject to change without notice 1 of 30 www.qorvo.com TQP7M9102 1/2 W High Linearity Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Min Typ Max Units Storage Temperature -65 to 150C Device Voltage (VCC) +4.75 +5 +5.25 V RF Input Power, CW, 50, T=25C +27dBm TCASE -40 +105 C 6 Device Voltage (VCC) +8V Tj for >10 hours MTTF +170 C Exceeding any one or a combination of the Absolute Maximum Rating Electrical specifications are measured at specified test conditions. conditions may cause permanent damage to the device. Specifications are not guaranteed over all recommended operating conditions. Application of conditions to the device outside the Recommended Operating Conditions may reduce device reliability and performance. Electrical Specifications (1) Parameter Conditions Min Typ Max Units Operational Frequency Range 400 5000 MHz Test Frequency 2140 MHz Gain 15.5 17.8 dB Input Return Loss 12 dB Output Return Loss 10 dB Output P1dB +26.4 +27.5 dBm Output IP3 Pout =+8 dBm/tone, f =1 MHz +41 +43.8 dBm WCDMA Channel Power 50dBc ACLR, Note 2 +18.5 dBm Noise Figure 3.9 dB Quiescent Current, I 115 137 155 mA CQ Thermal Resistance, Junction to case 50 C/W jc Notes: 1. Test conditions unless otherwise noted: VCC=+5V, Temp.=+25C, matched 2140MHz reference circuit 2. ACLR test set-up: 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 10.2 dB at 0.01% Probability Performance Summary Table Frequency 635 768 869 960 1540 1840 1960 2140 2140 2350 2600 3500 MHz Gain 22.4 20.9 21.8 21.7 20.2 20.0 18.4 15.5 17.8 16.0 14.5 14.5 dB Input Return Loss 12 9 10 17 15 17 13 8 12 17 14.5 17 dB Output Return Loss 14 8 12 9 6 7.5 7 8 11 8 8 11 dB Output P1dB +27.3 +28.4 +27.3 +27.4 +28.2 +27.5 +27.0 +30.7 +27.6 +27.2 +28.0 +26.2 dBm Output IP3 +44 +44 +43 +44 +51 +42 +46 +38 +44 +44 +44 +45 dBm Notes: 1. Test conditions unless otherwise noted: V =+5V, Temp.=+25C, matched reference circuit CC 2. Reference designs for the various frequencies are either included on this datasheet or may be obtained by contacting customer.support qorvo.com Datasheet, May 21, 2021 Subject to change without notice 2 of 30 www.qorvo.com