TQP9111 1.82.7 GHz 2 Watt Power Amplifier Applications Wireless Infrastructure Repeaters, Boosters, DAS High Power Amplifiers Pico and Macro Base Stations FDD or TDD 4x4 mm Leadless SMT Package Product Features Functional Block Diagram Pin 1 Marking 1.82.7 GHz Frequency Range 29.8 dB Gain Typ. +46 dBm Output IP3 at +14 dBm/tone +32.5 dBm P1dB NC 1 15 NC Integrated interstage matching RFin 2 14 RFout Bias Adjustable RFin 3 13 RFout Internal RF overdrive protection RFin 4 12 RFout Internal DC overvoltage protection NC 5 11 NC Shut-down capability Backside Paddle RF/DC GND Top View General Description Pin Configuration The TQP9111 is a high efficiency two-stage driver Pin No. Label amplifier in a low-cost surface-mount package. The 1, 5, 7, 9, 10, 11, 15, 17, 19 NC amplifier is able to achieve high performance with +46 2, 3, 4 RF in dBm OIP3 and +32.5 dBm P1dB. This linear amplifier 6 I integrates two high performance amplifier stages onto a REF1 module to allow for a compact system design. The 8 I REF2 integrated inter-stage match minimizes performance 12, 13, 14 RF out variation that would otherwise be attributed to external 16 V BIAS matching component value and placement tolerances. 18 VCC2 Both the input and output stage amplifiers are bias 20 V CC1 adjustable allowing the amplifiers power consumption to Backside Pad GND be reduced for occasions when high power performance is not required. Both stages can also be turned off when Ordering Information not being used for power savings or for TDD systems. The output match is externally tunable to allow the amplifier to Part No. Description be optimized for high power or high linearity applications. The TQP9111 is available in a RoHS-compliant 20-pin TQP9111 1.82.7 GHz Power Amplifier 4x4mm surface mount package. TQP9111-PCB2140 1.8-2.2 GHz Evaluation board TQP9111-PCB2600 2.3-2.7 GHz Evaluation board Standard T/R size = 2500 pieces on a 13 reel Advanced Data Sheet: Rev. E 09-17-15 Disclaimer: Subject to change without notice - 1 of 12 - 2015 TriQuint Semiconductor, Inc www.Qorvo.com / www.qorvo.com Iref1 6 20 Vcc1 NC 7 19 NC Iref2 8 18 Vcc2 NC 9 17 NC NC 10 16 VbiasTQP9111 1.82.7 GHz 2 Watt Power Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Min Typ Max Units Storage Temperature 55 to 150C Supply Voltage (V ) +5.0 +5.25 V CC Supply Voltage (V ) +6.5 V T 40 +105 C CC CASE 6 RF Input Power, CW, 50, T=25C +23 dBm Tj for >10 hours MTTF +170 C Operation of this device outside the parameter ranges Electrical specifications are measured at specified test given above may cause permanent damage. conditions. Specifications are not guaranteed over all recommended operating conditions. Electrical Specifications Test conditions unless otherwise noted: VCC=+5.0V, ICC=521 mA, IREF1=4.5 mA, IREF2=19.5 mA, Temp.=+25C, 50 system. Parameter Conditions Min Typ Max Units Operational Frequency Range 1800 2700 MHz Test Frequency 2140 MHz Gain 29.8 dB Input Return Loss 13 dB Output Return Loss 20 dB Noise Figure 6.2 dB Output P1dB +32.5 dBm Output IP3 Pout=+11 dBm/tone, f=1 MHz +46 dBm Current, ICC 521 mA Current, IREF1 4.5 mA Current, IREF2 19.5 mA Total Current 545 mA Thermal Resistance, Junction to case 22.6 C/W jc Advanced Data Sheet: Rev. E 09-17-15 Disclaimer: Subject to change without notice - 2 of 12 - 2015 TriQuint Semiconductor, Inc www.Qorvo.com / www.qorvo.com