TQP9113 1 W Linear Amplifier General Description The TQP9113 is a 1W, linear, two-stage driver amplifier in a low-cost surface-mount package. The amplifier is able to achieve high performance with +42dBm OIP3 and +30.4dBm P1dB while only consuming 216mA current. The input is internally matched and the amplifier only requires only a few external components for operation. The integrated interstage match minimizes performance variation that would otherwise be attributed to external matching component value and placement tolerances. 20-Pin 4x4mm Leadless QFN Package The TQP9113 is bias adjustable allowing the amplifiers power consumption to be reduced for occasions when Product Features linear performance is not required. The amplifier can also switched on and off for TDD applications. The output 18002700MHz Frequency Range match is tunable externally to allow the amplifier to be 27.2dB Gain optimized for high power or high linearity applications. +42dBm Output IP3 The TQP9113 is available in a RoHS-compliant 20-pin +30.4dBm P1dB 4x4mm surface mount package. +5V supply, 216mA Current Internal Input and Interstage Matching Bias Adjustable Power down functionality for TDD systems Applications Wireless Infrastructure FDD/TDD Base Stations Repeaters, Boosters, DAS Functional Block Diagram High Power Amplifiers Pin 1 Reference Mark Package Topside NC 1 15 NC RFin 2 14 RFout RFin 3 13 RFout RFin 4 12 RFout NC 5 11 NC Exposed Backside Pad GND Ordering Information Part No. Description Top View TQP9113* 18002700MHz Linear Amplifier TQP9113-PCB2140 18002200 MHz Evaluation Board TQP9113-PCB2600 23002700 MHz Evaluation Board *Standard T/R size = 2,500 pieces on a 13 reel Datasheet Rev. J, November 1, 2019 Subject to change without notice 1 of 15 www.qorvo.com 6 20 Iref1 Vcc1 7 19 NC NC 8 18 Iref2 Vcc2 9 17 NC NC 10 16 NC Vbias TQP9113 1 W Linear Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Min Typ Max Units Storage Temperature 55 to 150C Supply Voltage (VCC) +4.75 +5.0 +5.25 V Supply Voltage (VCC) +6 V TCASE 40 +105 C 6 RF Input Power, CW, 50, T=25C +15 dBm Tj for >10 hours MTTF +170 C Operation of this device outside the parameter ranges Electrical specifications are measured at specified test given above may cause permanent damage. conditions. Specifications are not guaranteed over all recommended operating conditions. Electrical Specifications Test conditions unless otherwise noted: V =+5.0V, Temp=+25C, in a matched 2140 MHz reference circuit. CC Parameter Conditions Min Typ Max Units Operational Frequency Range 1800 2700 MHz Test Frequency 2140 MHz Gain 25 27.2 30 dB Input Return Loss 14 dB Output Return Loss 14 dB Noise Figure 4.7 dB Output P1dB 28.9 +30.4 dBm Output IP3 Pout=+16 dBm/tone, f=1 MHz 38 +42 dBm (1) WCDMA Channel Power 50dBc ACLR +18.4 dBm Current, I Pin 16, 18 and 20 212 mA CC Current, I 1.2 mA REF1 Current, I 2.2 mA REF2 Total Current on Vcc of EVB circuit 216 245 mA Thermal Resistance, jc Junction to case 41.7 C/W Notes: 1. ACLR test set-up: 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 10.2 dB at 0.01% Probability Switching Time Test Conditions: V High = +5V, V Low = 0V, V = +5V, C10 = 1000pF on 2600MHz EVB, Temp = +25C PD PD CC Parameter Conditions Typical Value Units Switch-ON Time 50% of VPD to 90% of RF output, Effective VPD rise time 167ns 106 ns Switch-OFF Time 50% of VPD to 10% of RF output, Effective VPD fall time 171ns 13 ns Note: V requires 100% of +5V to ensure the ON state performances PD Datasheet Rev. J, November 1, 2019 Subject to change without notice 2 of 15 www.qorvo.com