X-On Electronics has gained recognition as a prominent supplier of TQP9218 RF Amplifier across the USA, India, Europe, Australia, and various other global locations. TQP9218 RF Amplifier are a product manufactured by Qorvo. We provide cost-effective solutions for RF Amplifier, ensuring timely deliveries around the world.

TQP9218 Qorvo

TQP9218 electronic component of Qorvo
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Part No.TQP9218
Manufacturer: Qorvo
Category: RF Amplifier
Description: RF Amplifier 1.805-1.88GHz 50 Ohm Gain 31dB PAE 16%
Datasheet: TQP9218 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 11.5681 ea
Line Total: USD 11.57 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 11.5681
25 : USD 8.1761
100 : USD 6.5768
250 : USD 5.5082
500 : USD 4.6813
1000 : USD 4.2361
2500 : USD 4.2234

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 2500
Multiples : 2500
2500 : USD 4.9233
12500 : USD 4.8249

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 2500
Multiples : 2500
2500 : USD 4.7988

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Type
Technology
Operating Frequency
P1dB - Compression Point
Gain
Operating Supply Voltage
NF - Noise Figure
OIP3 - Third Order Intercept
Minimum Operating Temperature
Maximum Operating Temperature
Operating Supply Current
Packaging
Series
Test Frequency
Amplifier Type
Brand
Number Of Channels
Development Kit
Input Return Loss
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the TQP9218 from our RF Amplifier category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TQP9218 and other electronic components in the RF Amplifier category and beyond.

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TQP9218 High Linearity 0.25 W Small Cell PA General Description The TQP9218 is a high-linearity two-stage power amplifier in a low-cost surface-mount package with on-chip bias control and temperature compensation circuits. The amplifier provides 31.5 dB gain over the 18051880 MHz frequency range and be utilized without the need of linearization circuitry such as DPD It is able to achieve 48dBc ACLR at +24 dBm output power using 20 MHz LTE 14 Pin 7x7mm Leadless SMT Package signal (9.5 dB PAR). Product Features The TQP9218 integrates two high performance amplifier stages onto a module to allow for a compact system design 18051880MHz Frequency Range and requires very few external components for operation. The product is bias adjustable allowing the amplifiers Fully integrated, 2-Stage Power Amplifier power consumption to be optimized and is available in a Internally Matched 50 Input/Output lead-free/RoHS-compliant 7x7mm surface mount 48dBc ACLR at Pavg = +24dBm package. 31.5dB Gain The TQP9218 is targeted for small cell or enterprise 15% PAE at +24dBm Femtocell basestation applications, distributed antenna >15dB Input / Output return Loss systems (DAS), repeaters, and/or booster amplifiers. 212mA Quiescent Current On-chip Control Bias and Temp. Comp Circuit RoHS compliant Covers Bands 3, 9 Functional Block Diagram Vref 1 14 GND Applications Biasing Circuit Small Cell/Picocell GND 2 13 GND Enterprise Femtocell Customer Premises Equipment (CPE) GND 3 Match 12 RF out Data Cards and Terminals Distributed Antenna Systems (DAS) Match VCC1 4 11 VCC2 Booster Amps, Repeaters Match RF in 5 10 GND GND 6 9 GND Backside Paddle RF/DC GND NC 7 8 GND Ordering Information Top View Part No. Description TQP9218 2,500 pieces on a 13 reel (standard) TQP9218-PCB 1805 1880MHz Evaluation Board Data Sheet, March 24, 2021 Subject to change without notice - 1 of 11 - www.qorvo.com TQP9218 High Linearity 0.25 W Small Cell PA Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Min Typ Max Units Storage Temperature 55 to +150C V , V +3.6 +4.5 +5.25 V CC1 cc2 RF Input Power, CW, 50, T=+25C +13 dBm Vref +2.75 +2.85 +2.95 V Supply Voltage (V ) 6 V T 40 +85 C CC CASE VREF +3.5 V Tj at TCASE max +165 C Exceeding any one or a combination of the Absolute Maximum Rating Electrical specifications are measured at specified test conditions. conditions may cause permanent damage to the device. Extended Specifications are not guaranteed over all recommended operating application of Absolute Maximum Rating conditions to the device may conditions. reduce device reliability. Electrical Specifications (1) Parameter Conditions Min Typ Max Units Frequency Range 1805 1880 MHz Test Frequency 1840 MHz Gain 28.5 31.5 34.5 dB Input Return Loss 10 17 dB Output Return Loss 10 16 dB Output P1dB +33 dBm ACLR Pout = +24 dBm, 20 MHz LTE E-TM1.1, 9.5 dB PAR 48 -45 dBc ACLR P = +24 dBm, 2X20 MHz LTE E-TM1.1, 9.5 dB PAR -40 dBc out ACLR P = +24 dBm, 15 MHz LTE E-TM1.1, 9.5 dB PAR 52 dBc out ACLR P = +24 dBm, 10 MHz LTE E-TM1.1, 9.5 dB PAR 52 dBc out ACLR P = +24 dBm, 5 MHz LTE E-TM1.1, 9.5 dB PAR 52 dBc out Efficiency Pout = +24 dBm, 20 MHz LTE E-TM1.1, 9.5 dB PAR 13 15.2 % Spurious Output Level Pout = +24 dBm, 10:1 VSWR <60 dBc VSWR Survivability No degradation or failure 10:1 - Quiescent Current VCC1 + VCC2 160 212 280 mA Reference Current Temp = 40C to +85C, VREF = +2.85V 6.5 10 mA Leakage current VCC = +4.5V, Vref = 0V 1.5 5 A Operational Current Pout = +24 dBm 365 460 mA 10% to 90% Rise time 620 ns Switching Speed 90% to 10% Fall time 610 ns 2F0 at +24dBm, CW signal -43 -38 dBc Harmonics 3F0 at +24dBm, CW signal -61 -56 dBc 4F0 at +24dBm, CW signal -58 -53 dBc Thermal Resistance, jc Module (junction to case) 37 C/W Notes: 1. Test conditions unless otherwise noted: V =V = +4.5V, V = +2.85V, Temp=+25C, 50 system. CC1 CC2 REF Parameter Conditions -40C +25C +85C Units Gain Small Signal 33.0 31.5 30.0 dB ACLR POUT = +24 dBm, 20MHz LTE E-TM1.1, 9.5dB PAR -50 -48 -46 dBc PAE POUT = +24 dBm, 20MHz LTE E-TM1.1, 9.5dB PAR 16 15 14 % Test Frequency = 1840MHz Data Sheet, March 24, 2021 Subject to change without notice - 2 of 11 - www.qorvo.com

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

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