TQP9221 High Linearity 0.25 W Small Cell PA General Description The TQP9221 is a high-linearity two-stage power amplifier in a low-cost surface-mount package with on-chip bias control and temperature compensation circuits. The amplifier provides 30.5 dB gain over the 20102200 MHz frequency range and be utilized without the need of linearization circuitry such as DPD It is able to achieve 49dBc ACLR at +24 dBm output power using 20 MHz LTE 14 Pin 7x7mm Leadless SMT Package signal (9.5 dB PAR). Product Features The TQP9221 integrates two high performance amplifier stages onto a module to allow for a compact system design 20102200MHz Frequency Range and requires very few external components for operation. The product is bias adjustable allowing the amplifiers Fully integrated, 2-Stage Power Amplifier power consumption to be optimized and is available in a Internally Matched 50 Input & Output lead-free/RoHS-compliant 7x7mm surface mount 49dBc ACLR at Pavg = +24dBm package. 30.5dB Gain The TQP9221 is targeted for small cell or enterprise 15% PAE at +24dBm Femtocell basestation applications, distributed antenna 220mA Quiescent Current systems (DAS), repeaters, and/or booster amplifiers. On-chip Control Bias and Temp. Comp Circuit RoHS compliant Covers Bands 1, 4, 10, 23, 34, 66 Functional Block Diagram Applications Vref 1 14 GND Small Cell/Picocell Biasing Circuit GND 2 13 GND Enterprise Femtocell Customer Premises Equipment (CPE) Match GND 3 12 RF out Data Cards and Terminals VCC1 Match 11 VCC2 4 Distributed Antenna Systems (DAS) Booster Amps, Repeaters RF in 5 Match 10 GND GND 6 9 GND Backside Paddle RF/DC GND NC 7 8 GND Top View Ordering Information Part No. Description TQP9221 2,500 pieces on a 13 reel (standard) TQP9221-PCB 2.11 2.17GHz Evaluation Board Datasheet, Rev P, September 12, 2019 Subject to change without notice - 1 of 12 - www.qorvo.com TQP9221 High Linearity 0.25 W Small Cell PA Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Min Typ Max Units Storage Temperature 55 to +150C V , V +3.6 +4.5 +5.25 V CC1 cc2 RF Input Power, CW, 50, T=+25C +13 dBm Vref +2.75 +2.85 +2.95 V Supply Voltage (V ) 6 V T 40 +85 C CC CASE VREF +3.5 V Tj at TCASE max +165 C Exceeding any one or a combination of the Absolute Maximum Rating Electrical specifications are measured at specified test conditions. conditions may cause permanent damage to the device. Extended Specifications are not guaranteed over all recommended operating application of Absolute Maximum Rating conditions to the device may conditions. reduce device reliability. Electrical Specifications (1) Parameter Conditions Min Typ Max Units Frequency Range 2010 2200 MHz Test Frequency 2140 MHz Gain 27.5 30.5 34.5 dB Input Return Loss 7 10 dB Output Return Loss 9 12 dB Output P1dB +33 dBm ACLR Pout = +24 dBm, 20 MHz LTE E-TM1.1, 9.5 dB PAR -49 -45 dBc ACLR Pout = +24 dBm, 2X20 MHz LTE E-TM1.1, 9.5 dB PAR -43 dBc ACLR Pout = +24 dBm, 15 MHz LTE E-TM1.1, 9.5 dB PAR -51 dBc ACLR P = +24 dBm, 10 MHz LTE E-TM1.1, 9.5 dB PAR -51 dBc out ACLR P = +24 dBm, 5 MHz LTE E-TM1.1, 9.5 dB PAR -51 dBc out Power Added Efficiency P = +24 dBm, 20 MHz LTE E-TM1.1, 9.5 dB PAR 13 15.2 % out Spurious Output Level P = +24 dBm, 10:1 VSWR <60 dBc out VSWR Survivability No degradation or failure 10:1 VSWR Quiescent Current VCC1 + VCC2 160 220 280 mA Reference Current Temp = 40C to +85C, VREF = +2.85V 6.5 10 mA VCC = +4.5V, Vref = 0V Leakage current 1.5 5 A Operational Current Pout = +24 dBm 365 460 mA 10% to 90% Rise time 620 nSec Switching Time 90% to 10% Fall time 840 nSec 2F0 at +24dBm, CW signal -37 -32 dBc Harmonics 3F0 at +24dBm, CW signal -52 -47 dBc 4F at +24dBm, CW signal -60 -55 dBc 0 Thermal Resistance, jc Module (junction to case) 37 C/W Notes: 1. Test conditions unless otherwise noted: V =V = +4.5V, V = +2.85V, Temp=+25C, 50 system. CC1 CC2 REF Datasheet, Rev P, September 12, 2019 Subject to change without notice - 2 of 12 - www.qorvo.com