TQP9421 High Linearity 0.5 W Small Cell PA Product Overview The TQP9421 is a high-linearity two-stage power amplifier in a low-cost surface-mount package with on-chip bias control and temperature control circuits, suitable for small cell base station applications. 7mmx7mm leadless SMT Package The TQP9421 provides 30dB gain and +27dBm linear power over the 2.112.17GHz frequency range. This amplifier is able to achieve 50dBc ACLR at +27dBm output power using 20 MHz LTE signal. The TQP9421 integrates two high performance amplifier stages onto a module to allow for a compact system design Key Features and requires very few external components for operation. 2.112.17GHz Frequency Range The amplifier is bias adjustable allowing the amplifiers Fully integrated, 2 Stage Power Amplifier power consumption to be optimized. The TQP9421 is Internally Matched 50 Input/Output available in a 7x7mm surface mount package. 50dBc ACLR at Pavg = +27dBm 30dB Gain 14.5% PAE at +27dBm 420mA Quiescent Current On-chip Control Bias and Temp. Comp Circuit Functional Block Diagram Applications Small Cell/Picocell Vref GND 1 14 Enterprise Femtocell Customer Premises Equipment (CPE) GND GND 2 13 Data Cards and Terminals GND RF out Distributed Antenna Systems (DAS) 3 12 Booster Amps, Repeaters VCC1 VCC2 Biasing Circuit 4 11 RF in GND 10 5 GND GND 6 9 Backside Paddle RF/DC GND NC GND 7 8 Ordering Information Top View Part No. Description TQP9421 High Linearity 0.5W Small Cell PA TQP9421-PCB 2.11 2.17 GHz Evaluation board Standard T/R size = 2500 pieces on a 13 reel Data Sheet, August 7, 2017 Subject to change without notice 1 of 8 www.qorvo.com TQP9421 High Linearity 0.5 W Small Cell PA Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Min Typ Max Units Storage Temperature 55 to +150C VCC1, Vcc2 +3.6 +4.5 +5.25 V V +2.75 +2.85 +2.95 V Supply Voltage (VCC) +6 V ref V +3.5 V TCASE 40 +85 C ref Tj at T max +165 C RF Input Power, CW, 50, T=25 C +13 dBm CASE Electrical specifications are measured at specified test conditions. Tj at T = 125C +205C CASE Specifications are not guaranteed over all recommended operating Operation of this device outside the parameter ranges given conditions. above may cause permanent damage. Electrical Specifications Test conditions unless otherwise noted: VCC1 = VCC2 = +4.5V, Vref = +2.85V, Temp= +25C Parameter Conditions Min Typ Max Units Operational Frequency Range 2110 2170 MHz Test Frequency MHz 2140 Gain 27 33 dB 30 Input Return Loss 15 dB 20 Output Return Loss 15 25 dB P1dB dBm +35.5 ACLR P =+27dBm,20MHzLTEE-TM1.1,9.5dB PAR -47 dBc OUT 50 ACLR P = +27 dBm, 2X20MHz LTE E-TM1.1, 9.5dB PAR dBc OUT -42 ACLR P = +27 dBm, 15MHz LTE E-TM1.1, 9.5dB PAR -50 dBc OUT ACLR P = +27 dBm, 10MHz LTE E-TM1.1, 9.5dB PAR dBc OUT -51 ACLR P = +27 dBm, 5MHz LTE E-TM1.1, 9.5dB PAR dBc OUT -50 Power Added Efficiency P =+27dBm,20MHzLTEE-TM1.1,9.5dB PAR 13 % OUT 14.5 1 Quiescent Current, I V + V 330 420 510 mA CQ CC1 CC2 Leakage Current V = +4.5V, V = 0V 10 A CC ref 3 Reference Current , I Temp = -40C to +85C, V = +2.85V 19.5 mA ref ref 13 Operational Current, I Pout = +27dBm 920 mA CC 680 Rise time (10%-90%) 715 ns Switching Speed Fall time (90%-10%) 1370 ns Pout +27dBm, In & Out of band load VSWR 10:1 -60 dBc Spurious Output Level No permanent degradation or failure 10:1 - VSWR survivability 2F (Pout = 27 dBm), CW signal -38 -33 dBc 0 3F (Pout = 27 dBm), CW signal -42 -37 dBc Harmonics 0 4F (Pout = 27 dBm), CW signal -42 -37 dBc 0 Module (junction to case) 18.5 C/W Thermal Resistance, jc Notes: 1. Current through Vcc1 does not vary with power. Vcc1 provides the bias voltage to the current mirror circuit along with Vref to set the bias point for the whole amplifier. Parameter Conditions -40C +25C +85C Units Gain Small Signal 31.5 30 28.7 dB ACLR P = +27 dBm, 20MHz LTE E-TM1.1, 9.5dB PAR -50 -49.5 dBc OUT -51 PAE P = +27 dBm, 20MHz LTE E-TM1.1, 9.5dB PAR 15.5 13.5 % OUT 14.5 P1dB +36.1 +34.2 dBm +35.5 Test Frequency = 2140MHz Data Sheet, August 7, 2017 Subject to change without notice 2 of 8 www.qorvo.com