TQP9309 High Efficiency 0.5W Small Cell Power Amplifier General Description The TQP9309 is a high-efficiency two-stage power amplifier in a low-cost surface-mount package with on-chip bias control and temperature compensation circuitry, suitable for small cell base station applications. TQP9309 provides 32 dB gain and >+28 dBm linear power with pre-distortion correction over the 0.7-1.0 GHz frequency range for Bands 5, 6, 8, 12, 13, 14, 17, 20, 26, 27, 28, and 29. With pre-distortion, the amplifier is able to achieve -50dBc ACLR at 28 dBm output power using a 20 MHz LTE signal. 3.5x4.5mm Leadless SMT Package The TQP9309 integrates two high performance amplifier stages onto a module to allow for a compact system design and requires very few external components for operation. Product Features The amplifier is bias adjustable allowing the amplifiers power consumption to be optimized. The TQP9309 is Frequency Range : 0.7-1.0 GHz available in a lead-free RoHS-compliant 3.5x4.5mm Covers multiple bands with one component surface mount package and is pin-compatible to the 1.8-2.2 Fully integrated, 2-stage Power Amplifier GHz TQP9321 and 2.5-2.7 GHz TQP9326. Internally matched 50 input/output -50dBc ACLR (DPD corrected) +28 dBm Pavg 32 dB Gain 27% PAE +28 dBm Pavg In-built Control Bias and Temp. Comp Circuit Single Supply Voltage : 5V Functional Block Diagram Lead-free / RoHS compliant POE Capable Applications Small-Cell Base Stations Enterprise Femtocell Bands 5, 6, 8, 12, 13, 14, 17, 20, 26, 27, 28, 29 Top View Ordering Information Part No. Description TQP9309TR13 2500 pieces on a 13 reel TQP9309EVB-01 Evaluation Board Datasheet, November 30, 2020 Subject to change without notice - 1 of 11 - www.qorvo.com TQP9309 High Efficiency 0.5W Small Cell Power Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Min Typ Max Units Storage Temperature 40 to +150C Device Voltage (VDD) +5 V Supply Voltage (V ) +6 V T 40 +25 +85 C CC CASE 6 RF Input Power, CW, 50, T=25C +10 dBm Tj for >10 hours MTTF +190 C Exceeding any one or a combination of the Absolute Maximum Rating Electrical specifications are measured at specified test conditions. conditions may cause permanent damage to the device. Extended Specifications are not guaranteed over all recommended operating application of Absolute Maximum Rating conditions to the device may conditions. reduce device reliability. Electrical Specifications Test conditions unless otherwise noted: V =+5V, Vpd = +5V, Temp= +25C, Test Frequency : 900MHz CC Parameter Conditions Min Typ Max Units Operational Frequency Range 700 960 MHz Output Channel Power +28 dBm 700 - 800MHz 28.6 31 dB Gain 800 - 960MHz 29.6 32 33.3 dB Gain Temperature Coefficient -0.026 dB/C ACLR Uncorrected See note 1 -37 dBc ACLR DPD Corrected See note 1 -50 dBc See note 1 Power Added Efficiency 27 % Noise Figure 4 dB Output P3dB +33.9 dBm +35 P3dB Temperature Coefficient -0.005 dBm/C Supply Voltage 5 V Quiescent Current, ICQ 85 100 127 mA Operational Current, Icc 380 mA Pout = +26dBm VSWR Survivability 7:1 Signal : WCDMA 1C, PAR = 8dB Thermal Resistance, jc Module (junction to backside paddle) 28.3 C/W Notes: 1. Using LTE signal, 20MHz, IBW = 18.02 MHz, PAR 7.5dB, Pout = +28 dBm Logic Table 2. Items in min/max columns in bold at guaranteed by production test at 900 MHz 3. Items in min/max columns that are not a bold font are guaranteed by design characterization. Parameter High Low Enab le Active Shutdown Datasheet, November 30, 2020 Subject to change without notice - 2 of 11 - www.qorvo.com