TQP9326 High Efficiency 0.5W Small Cell PA General Description The TQP9326 is a high-efficiency three-stage power amplifier in a low-cost surface-mount package with on- chip bias control and temperature control circuits, suitable for small cell base station applications. TQP9326 provides 34 dB gain and +27 dBm linear power with linearization correction over the 2.52.7 GHz 3.5x4.5mm Leadless SMT Package frequency range for Bands 7, 40, and 41. With pre- distortion, the amplifier is able to achieve 50dBc ACLR at +27 dBm output power using 20 MHz LTE signal. The TQP9326 integrates three high performance amplifier Product Features stages onto a module to allow for a compact system design and requires very few external components for 2.32.7 GHz Frequency Range operation. The amplifier is bias adjustable allowing the Fully integrated, 3 Stage Power Amplifier amplifiers power consumption to be optimized. The Internally matched 50 input/output TQP9326 is available in a lead-free/RoHS-compliant 50dBc ACLR at +27dBm Pavg (with correction) 3.5x4.5mm surface mount package. 34dB Gain 22% PAE at +27 dBm 115mA Quiescent Current In-built Control Bias and Temp. Comp Circuit Single Supply Voltage: +5V Lead-free/RoHS compliant POE Capable Functional Block Diagram Applications RFin Vpd1 Vpd2 NC NC GND RFout Small-Cell / Pico-Cell Enterprise Femtocell 13 12 11 10 9 8 7 Bands 7, 40, 41 Exposed Backside Pad GND Matching AMP1 AMP2 AMP3 Network Pin 1 Reference Mark Ordering Information Package Topside 1 2 3 4 5 6 Part No. Description TQP9326 High Efficiency 0.5W Small Cell PA Vbias Vcc NC NC GND GND TQP9326-PCB 2.5 2.7 GHz Evaluation board Top View Data Sheet April 14, 2017 Subject to change without notice - 1 of 9 - www.qorvo.com TQP9326 High Efficiency 0.5W Small Cell PA Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Min Typ Max Units V +4.75 +5 +5.25 V Storage Temperature 55 to +150 C DD T 40 +25 +85 C CASE Supply Voltage (V ) +6 V CC 6 Tj for >10 hours MTTF +175 C RF Input Power, CW, 50, T=25 C +10 dBm Notes: Electrical specifications are measured at specified test conditions. Exceeding any one or a combination of the Absolute Maximum Rating Specifications are not guaranteed over all recommended operating conditions may cause permanent damage to the device. Extended conditions. application of Absolute Maximum Rating conditions to the device may reduce device reliability. Electrical Specifications Test conditions unless otherwise noted: V =+5V, Vpd = +5V, Temp= +25C. CC Parameter Conditions Min Typ Max Units Operational Frequency Range 2300 2700 MHz Output Channel Power +27 dBm Gain 25002700 MHz 34 dB ACLR Uncorrected See note 1 35 dBc ACLR Corrected See note 1 48 dBc Power Added Efficiency See note 1 22 % Noise Figure 4.0 dB Output P3dB 2500-2700 MHz +35 dBm Supply Voltage 5 V Quiescent Current, I 115 mA CQ Reference Current , Ipd 2 mA Operational Current, Icc Pout = +27dBm 454 mA Pout = +26dBm, 2.5 2.7 GHz 7:1 VSWR Survivability Signal : WCDMA 1C, PAR = 8dB Thermal Resistance, jc Module (junction to case) 27 C/W Notes: 1. Using LTE signal, 20MHz/Carrier, IBW=18.02MHz, PAR 7.5dB, Pout=+27dBm Data Sheet April 14, 2017 Subject to change without notice - 2 of 9 - www.qorvo.com