X-On Electronics has gained recognition as a prominent supplier of MMA25312BT1 RF Amplifier across the USA, India, Europe, Australia, and various other global locations. MMA25312BT1 RF Amplifier are a product manufactured by NXP. We provide cost-effective solutions for RF Amplifier, ensuring timely deliveries around the world.

MMA25312BT1 NXP

MMA25312BT1 electronic component of NXP
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Part No.MMA25312BT1
Manufacturer: NXP
Category: RF Amplifier
Description: RF Amplifier InGaP HBT Linear Amplifier, 2300-2700 MHz, 26 dB, 31 dBm
Datasheet: MMA25312BT1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 9.2131
10 : USD 6.1308
25 : USD 5.9444
100 : USD 5.8202
250 : USD 5.7062
500 : USD 5.582
1000 : USD 5.5198
N/A

Obsolete
   
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RoHS - XON
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We are delighted to provide the MMA25312BT1 from our RF Amplifier category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMA25312BT1 and other electronic components in the RF Amplifier category and beyond.

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DocumentNumber:MMA25312B FreescaleSemiconductor Rev. 2, 9/2014 Technical Data HeterojunctionBipolarTransistor MMA25312BT1 Technology(InGaPHBT) High Efficiency/Linearity Amplifier The MMA25312B is a 2--stage high efficiency InGaP HBT driver amplifier 2300--2700MHz,26dB designed for use in 2400 MHz ISM applications, WLAN (802.11g), WiMAX 31dBm (802.16e)andwirelessbroadbandmeshnetworks.Itissuitableforapplications InGaPHBTLINEARAMPLIFIER with frequencies from 2300 to 2700 MHz using simple external matching components witha3to5Vsupply. Typical Performance: V =V =V =5Vdc,I = 150 mA CC1 CC2 BIAS CQ P G EVM out ps Frequency (dBm) (dB) (%) TestSignal 2450 MHz 20.5 27.4 3.0 WLAN (802.11g) QFN3 3 2350 MHz 23.0 27.2 3.0 WiMAX (802.16e) Features Frequency: 2300--2700 MHz P1dB: 31 dBm 2500 MHz Power Gain: 26 dB 2500 MHz Third Order Output Intercept Point: 40 dBm 2500 MHz Active Bias Control (On--chip) Single 3 to 5 V Supply Single--ended Power Detector Cost--effective 12--pin, 3 mm QFN Surface Mount Plastic Package In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel. (1) Table1.TypicalCWPerformance Table2.MaximumRatings 2300 2500 2700 Rating Symbol Value Unit Characteristic Symbol MHz MHz MHz Unit Supply Voltage V 6 V CC Small--SignalGain G 26 26 24.5 dB p Supply Current I 550 mA CC (S21) RF Input Power P 30 dBm in Input Return Loss IRL --14 --12 --12 dB (S11) Storage Temperature Range T --65to+150 C stg Junction Temperature T 175 C Output Return Loss ORL --11 --13 --15 dB J (S22) Power Output P1dB 30 31 29.8 dBm 1dB Compression 1. V =V =V =5Vdc,T =25 C, 50 ohm system, CW CC1 CC2 BIAS A Application Circuit Table3.ThermalCharacteristics (2) Characteristic Symbol Value Unit ThermalResistance, Junction to Case R 92 C/W JC Case Temperature 91C, V =V =V =5Vdc CC1 CC2 BIAS 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to Table4.ElectricalCharacteristics (V =V =V =5 Vdc, 2500 MHz, T =25 C, 50 ohm system, in Freescale CW Application CC1 CC2 BIAS A Circuit) Characteristic Symbol Min Typ Max Unit Small--SignalGain (S21) G 24.5 26 dB p Input Return Loss (S11) IRL --12 dB Output Return Loss (S22) ORL --13 dB Power Output 1dB Compression P1dB 31 dBm Third Order Output Intercept Point, Two--Tone CW OIP3 40 dBm Noise Figure NF 3.8 dB Supply Current I 110 124 138 mA CQ Supply Voltage V 5 V CC Table5.ESDProtectionCharacteristics TestMethodology Class Human Body Model(per JESD 22--A114) 2 Machine Model(per EIA/JESD 22--A115) A Charge Device Model(per JESD 22--C101) IV Table6.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit Per JESD22--A113, IPC/JEDEC J--STD--020 1 260 C V V V BA2 CC1 CC1 V V V BA2 CC1 CC1 V RF out 12 11 10 BA1 BIASBIAS CIRCUITCIRCUIT V BA119 RF out RF out V RF BIAS28 out V BIAS RF V 37 CC2 V in CC2 45 6 RF in N.C. N.C. PDET PDET Figure1.FunctionalBlockDiagram Figure2.PinConnections MMA25312BT1 RF DeviceData Freescale Semiconductor, Inc. 2

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI
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