TQP7M9105 1W High Linearity Amplifier Product Overview The TQP7M9105 is a high linearity, high gain 1W driver amplifier in industry standard, RoHS compliant, SOT-89 surface mount package. This InGaPGaAs HBT delivers high performance across 0.05 to 1.5GHz while achieving 3-pin SOT89 Package +47dBm OIP3 and +30dBm P1dB at 940MHz while only consuming 220mA quiescent current. All devices are 100% RF and DC tested. Key Features The TQP7M9105 incorporates on-chip features that 501500MHz differentiate it from other products in the market. The +30dBm P1dB at 940MHz amplifier has a dynamic active bias circuit that enable +47dBm Output IP3 at 940MHz stable operation over bias and temperature variations and 19.5dB Gain at 940MHz can provide a high linearity at back-off operation +5V Single Supply, 220mA Current The TQP7M9105 is targeted for use as a driver amplifier in Internal RF Overdrive Protection wireless infrastructure where high linearity, medium power, Internal DC Overvoltage Protection and high efficiency are required. The device an excellent On Chip ESD Protection candidate for transceiver line cards and high-power SOT-89 Package amplifiers in current and next generation multi-carrier 3G/4G base stations. Functional Block Diagram Applications Repeaters GND BTS Transceivers 4 BTS High Power Amplifiers CDMA / WCDMA / LTE General Purpose Wireless ISM Equipment 1 2 3 RF IN GND RF OUT Top View Ordering Information Part No. Description TQP7M9105 1 W High Linearity Amplifier TQP7M9105-PCB900 920960MHz Evaluation Board Standard T/R size = 1000 pieces on a 7 reel Datasheet, May 21, 2021 Subject to change without notice 1 of 13 www.qorvo.com TQP7M9105 1W High Linearity Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Min Typ Max Units Storage Temperature 65 to 150C Device Voltage (VCC) +5.0 +5.25 V T 40 +105 C RF Input Power, CW, 50, T=+25C +30dBm CASE 6 Device Voltage (V ) +8V Tj for >10 hours MTTF +170 C CC Electrical specifications are measured at specified test conditions. Operation of this device outside the parameter ranges given Specifications are not guaranteed over all recommended operating above may cause permanent damage. conditions. Electrical Specifications Test conditions unless otherwise noted: V = +5.0V, Temp= +25C CC Parameter Conditions Min Typ Max Units Operational Frequency Range 50 1500 MHz Test Frequency 940 MHz Gain 17.5 19.4 20.5 dB Input Return Loss 14 dB Output Return Loss 15 dB Output P1dB +28.7 +30 dBm +43.5 +47 Output IP3 Pout = +15 dBm/tone, f = 1 MHz dBm (1) WCDMA Output Power 50 dBc ACLR +20.5 dBm Noise Figure 6.3 dB Quiescent Current, ICQ 195 220 245 mA Thermal Resistance, Module (junction to backside ground paddle) 27.3 C/W jc Notes: 1. ACLR Test set-up: 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 10.2 dB at 0.01% Prob. Datasheet, May 21, 2021 Subject to change without notice 2 of 15 www.qorvo.com