TQP7M9103 1W High Linearity Amplifier Product Overview The TQP7M9103 is a high linearity driver amplifier in industry standard, RoHS compliant, SOT-89 surface mount package. This InGaP/GaAs HBT delivers high performance across a broad range of frequencies while achieving +45dBm OIP3 and +29.5dBm P1dB while only consuming 3-pin SOT89 Package 235 mA quiescent current. All devices are 100% RF and DC tested. Key Features The TQP7M9103 incorporates on-chip features that differentiate it from other products in the market. The 4004000 MHz amplifier integrates an on-chip DC over-voltage and RF +29.5dBm P1dB over-drive protection. This protects the amplifier from +45dBm Output IP3 electrical DC voltage surges and high input RF input power levels that may occur in a system. 16.5dB Gain at 2140 MHz +5V Single Supply, 235mA Current The TQP7M9103 is targeted for use as a driver amplifier in Internal RF Overdrive Protection wireless infrastructure where high linearity, medium power, Internal DC Overvoltage Protection and high efficiency are required. The device an excellent candidate for transceiver line cards and high power On chip ESD Protection amplifiers in current and next generation multi-carrier RF Power Handling 10:1 VSWR, V =+5V, 2.14 GHz CC 3G/4G base stations. Pout=+29.5dBm CW Pout=+20dBm WCDMA SOT89 Package Functional Block Diagram Applications Repeaters GND BTS Transceivers 4 BTS High Power Amplifiers CDMA / WCDMA / LTE General Purpose Wireless 1 2 3 RF IN GND RF OUT Top View Ordering Information Part No. Description TQP7M9103 1 W High Linearity Amplifier TQP7M9103-PCB900 920960MHz Evaluation Board TQP7M9103-PCB2140 2.112.17GHz Evaluation Board TQP7M9103-PCB2600 2.62 2.69 GHz Evaluation Board Standard T/R size = 1000 pieces on a 7 reel Data Sheet, April 13, 2018 Subject to change without notice 1 of 24 www.qorvo.com TQP7M9103 1W High Linearity Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Min Typ Max Units Storage Temperature 65 to 150C Device Voltage (VCC) +5.0 +5.25 V T 40 +105 C RF Input Power, CW, 50, T=+25C +30dBm CASE 6 Device Voltage (V ) +8V Tj for >10 hours MTTF +170 C CC Electrical specifications are measured at specified test conditions. Operation of this device outside the parameter ranges given Specifications are not guaranteed over all recommended operating above may cause permanent damage. conditions. Electrical Specifications Test conditions unless otherwise noted: VCC = +5.0V, Temp= +25C Parameter Conditions Min Typ Max Units Operational Frequency Range 400 4000 MHz Test Frequency 2140 MHz Gain 14.7 16.6 17.7 dB Input Return Loss 12.0 dB Output Return Loss 15.0 dB Output P1dB +28.5 +29.5 dBm +42.5 +45 Output IP3 Pout = +15 dBm/tone, f = 1 MHz dBm (1) WCDMA Output Power 50 dBc ACLR +20 dBm Noise Figure 4.4 dB Quiescent Current, ICQ 210 235 260 mA Thermal Resistance, Module (junction to case) 35.6 C/W jc Notes: 1. ACLR Test set-up: 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 10.2 dB at 0.01% Prob. Data Sheet, April 13, 2018 Subject to change without notice 2 of 24 www.qorvo.com