TQP3M9035 High Linearity LNA Gain Block Applications Repeaters Mobile Infrastructure LTE / WCDMA / CDMA / GSM General Purpose Wireless TDD or FDD systems 2x2mm 8-lead DFN plastic package Product Features Functional Block Diagram 50-4000 MHz 0.66 dB Noise Figure 1.9 GHz 1 8 16.5 dB Gain 1.9 GHz RF Out RF In 2 7 +37.0 dBm Output IP3 +22.5 dBm P1dB Shutdown 3 6 Shut-down capability 4 5 Unconditionally stable 50 Ohm Cascadable Gain Block +5V Single Supply, 110 mA Current 2x2mm 8-lead DFN plastic package General Description Pin Configuration The TQP3M9035 is a high linearity low noise gain block Pin Symbol amplifier in a low-cost surface-mount package. At 1.9 1,3,4,5,8 N/A GHz, the amplifier typically provides 16.5 dB gain, +37.0 2 RF Input dBm OIP3, and 0.66 dB Noise Figure. The LNA is also 6 SD (Shutdown) designed to be broadband without the requirement for external matching. The device is housed in a lead- 7 RF Output free/green/RoHS-compliant industry-standard 2x2mm package. The TQP3M9035 has the benefit of having high linearity while also providing very low noise across a broad range of frequencies. This allows the device to be used in both receive and transmit chains for high performance systems. The amplifier is internally matched using a high performance E-pHEMT process and only requires an external RF choke and blocking/bypass capacitors for operation from a single +5V supply. The low noise amplifier integrates a shut-down biasing capability to Ordering Information allow for operation for TDD applications. The TQP3M9035 covers the 0.05 - 4 GHz frequency band Part No. Description and is targeted for wireless infrastructure or other TQP3M9035 High Linearity LNA Gain Block applications requiring high linearity and/or low noise figure. TQP3M9035-PCB 0.5-4 GHz Evaluation Board Standard T/R size = 2500 pieces on a 7 reel. Data Sheet: Rev B 09/24/12 - 1 of 7 - Disclaimer: Subject to change without notice 2012 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network TQP3M9035 High Linearity LNA Gain Block Specifications Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Min Typ Max Units o Storage Temperature -55 to +150 C V +5 +5.25 V dd o Device Voltage,V +6 V T -40 85 C dd case 6 o Max RF Input Power (continuous) +23 dBm Tj (for>10 hours MTTF) 190 C Operation of this device outside the parameter ranges given Electrical specifications are measured at specified test conditions. above may cause permanent damage. Specifications are not guaranteed over all recommended operating conditions. Electrical Specifications Test conditions unless otherwise noted: +25C, +5V Vsupply, 50 system. Parameter Conditions Min Typical Max Units Operational Frequency Range 50 4000 MHz Test Frequency 1900 MHz Gain 15 16.5 18 dB Input Return Loss 15 dB Output Return Loss 10 dB Output P1dB +20 +22.5 dBm Output IP3 See Note 1. +32.5 +37.0 dBm 0.66 0.9 dB Noise Figure +5 V V dd On state 110 mA Current, I dd Off state 3.0 mA Shutdown pin current, I V > 3 V 100 A sd sd o Thermal Resistance (jnc to case) 50 C/W jc Notes 1. OIP3 measured with two tones at an output power of +4 dBm / tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the OIP3 using 2:1 rule. Power Shutdown Control State Pin 6 Bias Condition On state 0.8 V Power down 3.0 V Data Sheet: Rev B 09/24/12 - 2 of 7 - Disclaimer: Subject to change without notice 2012 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network