TQP3M9008 High Linearity LNA Gain Block General Description The TQP3M9008 is a cascade-able, high linearity gain block amplifier in a low-cost surface-mount package. At 3-pin SOT-89 Package 1.9GHz, the amplifier typically provides 20.6dB gain, +36dBm OIP3, and 1.3dB Noise Figure while only drawing 85mA current. The device is housed in a lead- free/green/RoHS-compliant industry-standard SOT-89 Product Features package. 504000MHz The TQP3M9008 has the benefit of having high gain 20.6dB Gain at 1.9GHz across a broad range of frequencies while also providing +36dBm Output IP3 very low noise. This allows the device to be used in both 1.3dB Noise Figure at 1.9GHz receiver and transmitter chains for high performance 50 Ohm Cascadable Gain Block systems. The amplifier is internally matched using a high- Unconditionally stable performance E-pHEMT process and only requires an High input power capability external RF choke and blocking/bypass capacitors for +5V Single Supply, 85mA Current operation from a single +5V supply. The internal active SOT-89 Package bias circuit also enables stable operation over bias and temperature variations. The TQP3M9008 covers the 0.054GHz frequency band and is targeted for wireless infrastructure or other Applications applications requiring high linearity and/or low noise Repeaters figure. Mobile Infrastructure LTE / WCDMA / EDGE / CDMA General Purpose Wireless Functional Block Diagram Backside Paddle - GND Ordering Information 1 2 3 Part No. Description RF IN GND RF OUT / V TQP3M9008 High Linearity LNA Gain Block DD TQP3M9008-PCB IF 0.050.5 GHz Evaluation Board TQP3M9008-PCB RF 0.54.0 GHz Evaluation Board Standard T/R size = 1000 pieces on a 7 reel Datasheet, Rev W, November 4, 2021 Subject to change without notice 1 of 12 www.qorvo.com TQP3M9008 High Linearity LNA Gain Block Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Min Typ Max Units Storage Temperature 65 to 150C Device Voltage (VDD) +3.0 +5.0 +5.25 V RF Input Power, CW, 50, T=25 C +23dBm T 40 +105 C CASE 6 Device Voltage (VDD) +7V Tj for >10 hours MTTF +190 C Electrical specifications are measured at specified test conditions. Reverse Device Voltage 0.3V Specifications are not guaranteed over all recommended operating Exceeding any one or a combination of the Absolute Maximum Rating conditions. Application of conditions to the device outside the conditions may cause permanent damage to the device. Recommended Operating Conditions may reduce device reliability and performance. Electrical Specifications Test conditions unless otherwise noted: VDD=+5 V, Temp.=+25C, 50 system Parameter Conditions Min Typ Max Units Operational Frequency Range 50 4000 MHz Test Frequency 1900 MHz Gain 19 20.6 22 dB Input Return Loss 16 dB Output Return Loss 17 dB Output P1dB +20 dBm Output IP3 Pout=+3dBm/tone, f=1 MHz +32.5 +36 dBm Noise Figure 1.3 dB Current, I 85 100 mA DD Thermal Resistance, jc Junction to case 38.7 C/W Datasheet, Rev W, November 4, 2021 Subject to change without notice 2 of 12 www.qorvo.com