TPC6901 TOSHIBA Multi-Chip Transistor Silicon NPN & PNP Epitaxial Type TPC6901 High-Speed Switching Applications Unit: mm MOS Gate Drive Applications NPN and PNP transistors are mounted on a compact and slim package. High DC current gain : NPN h = 400 to 1000 FE : PNP h = 200 to 500 FE Low collector-emitter saturation voltage : NPN V = 0.17 V (max) CE (sat) : PNP V = 0.23 V (max) CE (sat) High-speed switching: NPN t = 85 ns (typ.) f : PNP tf = 70 ns (typ.) Maximum Ratings (Ta = 25C) Rating Characteristics Symbol Unit NPN PNP 50 Collector-base voltage V 100 V CBO Collector-emitter voltage V 80 50 V CEX JEDEC Collector-emitter voltage V 50 50 V CEO JEITA Emitter-base voltage V 7 7 V EBO TOSHIBA 2-3T1A DC (Note 1) I 1.0 0.7 A C Collector current Weight: 0.011 g (typ.) I 2.0 2.0 Pulse (Note 1) A CP Base current I 0.1 0.1 A B Collector power Single-device dissipation (t=10 s) P(1) 500 mW C operation (Note 2) Single-device P(2) 400 C operation Collector power dissipation (DC) mW Single-device (Note 2) value at dual P(3) 330 C operation Thermal resistance, Single-device junction to ambient R (1) 250 C/W th (j-a) operation (t=10 s) (Note 2) Single-device R (2) 312 th (j-a) operation Thermal resistance, junction to ambient C/W Single-device (DC) (Note 2) value at dual R (3) 378 th (j-a) operation Junction temperature T 150 C j Storage temperature range T 55 to 150 C stg Note 1: Ensure that the channel temperature does not exceed 150C. 2 Note 2:Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm ) 1 2004-11-02 TPC6901 Circuit Configuration Marking 6 5 4 Lot code (month) Lot No. Part No. H6A (or abbreviation code) Product-specific code Pin 1 Lot code A line indicates 1 2 3 (year) lead (Pb)-free package or lead (Pb)-free finish. Electrical Characteristics (Ta = 25C) : NPN Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current I V = 100 V, I = 0 100 nA CBO CB E Emitter cut-off current I V = 7 V, I = 0 100 nA EBO EB C Collector-emitter breakdown voltage V I = 10 mA, I = 0 50 V (BR) CEO C B h (1) V = 2 V, I = 0.1 A 400 1000 FE CE C DC current gain h (2) V = 2 V, I = 0.3 A 200 FE CE C Collector-emitter saturation voltage V I = 300 mA, I = 6 mA 0.17 V CE (sat) C B Base-emitter saturation voltage V I = 300 mA, I = 6 mA 1.10 V BE (sat) C B Collector output capacitance C V = 10 V, I = 0, f = 1 MHz 5 pF ob CB E Rise time t See Figure 1 circuit diagram. 35 r Switching time V 30 V, R = 100 ns Storage time t 680 stg CC L I = I = 10 mA Fall time t 85 B1 B2 f Electrical Characteristics (Ta = 25C) : PNP Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current I V = 50 V, I = 0 100 nA CBO CB E Emitter cut-off current I V = 7 V, I = 0 100 nA EBO EB C Collector-emitter breakdown voltage V I = 10 mA, I = 0 50 V (BR) CEO C B h (1) V = 2 V, I = 0.1 A 200 500 FE CE C DC current gain h (2) V 2 V, I 0.3 A 125 = = FE CE C Collector-emitter saturation voltage V I = 300 mA, I = 10 mA 0.23 V CE (sat) C B Base-emitter saturation voltage V I = 300 mA, I = 10 mA 1.10 V BE (sat) C B Collector output capacitance C V = 10 V, I = 0, f = 1 MHz 8 pF ob CB E Rise time t See Figure 2 circuit diagram. 60 r Switching time Storage time t V 30 V, R = 100 280 ns stg CC L I = I = 10 mA Fall time t 70 B1 B2 f 2 2004-11-02