TPC8014(TE12L,Q) Toshiba

TPC8014 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) TPC8014 Lithium Ion Battery Applications Unit: mm Portable Equipment Applications Notebook PC Applications Small footprint due to small and thin package Low drain-source ON resistance: R = 11 m (typ.) DS (ON) High forward transfer admittance: Y = 10 S (typ.) fs Low leakage current: I = 10 A (max) (V = 30 V) DSS DS Enhancement mode: V = 1.3 to 2.5 V (V = 10 V, I = 1 mA) th DS D Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage V 30 V DSS JEDEC Drain-gate voltage (R = 20 k) V 30 V GS DGR JEITA Gate-source voltage V 20 V GSS DC (Note 1) I 11 TOSHIBA 2-6J1B D Drain current A Pulse (Note 1) I 44 DP Weight: 0.08 g (typ.) Drain power dissipation (t = 10 s) P 1.9 W D (Note 2a) Drain power dissipation (t = 10 s) P 1.0 W D Circuit Configuration (Note 2b) 8 6 7 5 Single pulse avalanche energy E 157 mJ AS (Note 3) Avalanche current I 11 A AR Repetitive avalanche energy E 0.19 mJ AR (Note 2a) (Note 4) Channel temperature T 150 C ch 1 2 3 4 Storage temperature range T 55 to 150 C stg Note: (Note 1), (Note 2), (Note 3) and (Note 4): See the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Please handle with caution. 1 2009-09-29 TPC8014 Thermal Characteristics Characteristics Symbol MaxUnit Thermal resistance, channel to ambient R 65.8 C/W th (ch-a) (t = 10 s) (Note 2a) Thermal resistance, channel to ambient R 125 C/W th (ch-a) (t = 10 s) (Note 2b) Marking (Note 5) TPC8014 Part No. (or abbreviation code) Lot No. Note 6 Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 FR-4 25.4 25.4 0.8 25.4 25.4 0.8 (unit: mm) (unit: mm) (a) (b) Note 3: V = 24 V, T = 25C (initial), L = 1.0 mH, R = 25 , I = 11 A DD ch G AR Note 4: Repetitive rating: pulse width limited by max channel temperature Note 5: on the lower left of the marking indicates Pin 1. Weekly code: (Three digits) Week of manufacture (01 for first week of year, continuing up to 52 or 53) Year of manufacture (The last digit of the calendar year) Note 6: A line under a Lot No. identifies the indication of product Labels. Not underlined: Pb /INCLUDES > MCV Underlined: G /RoHS COMPATIBLE or G /RoHS Pb Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2009-09-29