TPC8120 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPC8120 Lithium Ion Battery Applications Power Management Switch Applications Unit: mm Small footprint due to small and thin package Low drain-source ON-resistance: R = 2.6 m (typ.) DS (ON) High forward transfer admittance: Y =80 S (typ.) fs Low leakage current: I = 10 A (max) (V = 30 V) DSS DS Enhancement mode: V = 0.8 to 2.0 V (V = 10 V, I = 1 mA) th DS D Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage V 30 V DSS Drain-gate voltage (R = 20 k) V 30 V GS DGR Gate-source voltage V 25/+20 V GSS DC (Note 1) I 18 D Drain current A Pulse (Note 1) I 72 DP Drain power dissipation (t = 10 s) P 1.9 W D (Note 2a) Drain power dissipation (t = 10 s) JEDEC P 1.0 W D (Note 2b) JEITA Single pulse avalanche energy E 211 mJ AS (Note 3) TOSHIBA 2-6J1B Avalanche current I 18 A AR Weight: 0.080 g (typ.) Repetitive avalanche energy E 0.03 mJ AR (Note 2a) (Note 4) Channel temperature T 150 C ch Circuit Configuration Storage temperature range T 55 to 150 C stg 8 6 7 5 Note 1, Note 2, Note 3 and Note 4: See the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum 1 2 3 4 ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with care. 1 2009-07-27 TPC8120 Thermal Characteristics Characteristics Symbol MaxUnit Thermal resistance, channel to ambient R 65.8 C/W th (ch-a) (t = 10 s) (Note 2a) Thermal resistance, channel to ambient R 125 C/W th (ch-a) (t = 10 s) (Note 2b) Marking (Note 5) Note 6: A line under a Lot No. identifies the indication of product Labels G /RoHS COMPATIBLE or G /RoHS Pb Part No. (or abbreviation code) TPC8120 Please contact your TOSHIBA sales representative for details as to Lot No. (weekly code) environmental matters such as the RoHS compatibility of Product. The RoHS is Directive 2002/95/EC of the European Parliament and Note 6 of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 FR-4 25.4 25.4 0.8 25.4 25.4 0.8 (Unit: mm) (Unit: mm) (a) (b) Note 3: V = 24 V, T = 25C (initial), L = 500 H, R = 25 , I = 18 A DD ch G AR Note 4: Repetitive rating: pulse width limited by maximum channel temperature Note 5: on lower left of the marking indicates Pin 1. Weekly code: (Three digits) Week of manufacture (01 for the first week of a year: sequential number up to 52 or 53) Year of manufacture (The last digit of a year) 2 2009-07-27