X-On Electronics has gained recognition as a prominent supplier of TPC8065-H,LQ(S MOSFETs across the USA, India, Europe, Australia, and various other global locations. TPC8065-H,LQ(S MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

TPC8065-H,LQ(S Toshiba

TPC8065-H,LQ(S electronic component of Toshiba
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Part No.TPC8065-H,LQ(S
Manufacturer: Toshiba
Category: MOSFETs
Description: Toshiba MOSFET N-Ch 30V FET 13A 1.9W 1350pF
Datasheet: TPC8065-H,LQ(S Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 2.2815
10 : USD 0.8584
100 : USD 0.6502
500 : USD 0.5519
1000 : USD 0.4536
2500 : USD 0.4234
5000 : USD 0.405
10000 : USD 0.391
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
Mounting Style
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Technology
Number of Channels
Vgs - Gate-Source Voltage
Transistor Type
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We are delighted to provide the TPC8065-H,LQ(S from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TPC8065-H,LQ(S and other electronic components in the MOSFETs category and beyond.

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TPC8065-H MOSFETs Silicon N-Channel MOS (U-MOS-H) TPC8065-HTPC8065-HTPC8065-HTPC8065-H 1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets 2. 2. FeaturesFeatures 2. 2. FeaturesFeatures (1) Small, thin package (2) High-speed switching (3) Small gate charge: Q = 4.3 nC (typ.) SW (4) Low drain-source on-resistance: R = 11.9 m (typ.) (V = 4.5 V) DS(ON) GS (5) Low leakage current: I = 10 A (max) (V = 30 V) DSS DS (6) Enhancement mode: V = 1.3 to 2.3 V (V = 10 V, I = 0.2 mA) th DS D 3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP-8 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 unless otherwise specified) unless otherwise specified) 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 unless otherwise specified) unless otherwise specified) aa aa Characteristics Symbol Rating Unit Drain-source voltage V 30 V DSS Gate-source voltage V 20 GSS Drain current (DC) (Note 1) I 13 A D Drain current (pulsed) (Note 1) I 52 DP Power dissipation (t = 10 s) (Note 2) P 1.9 W D Power dissipation (t = 10 s) (Note 3) P 1.0 W D Single-pulse avalanche energy (Note 4) E 43 mJ AS Avalanche current I 13 A AR Channel temperature T 150 ch Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 2010-09 2014-02-14 1 Rev.3.0TPC8065-H 5. 5. 5. 5. Thermal CharacteristicsThermal CharacteristicsThermal CharacteristicsThermal Characteristics Characteristics Symbol Max Unit Channel-to-ambient thermal resistance (t = 10 s) (Note 2) R 65.7 /W th(ch-a) Channel-to-ambient thermal resistance (t = 10 s) (Note 3) R 125 /W th(ch-a) Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: Device mounted on a glass-epoxy board (a), Figure 5.1 Note 3: Device mounted on a glass-epoxy board (b), Figure 5.2 Note 4: V = 24 V, T = 25 (initial), L = 0.2 mH, R = 1.2 , I = 13 A DD ch G AR Fig. Fig. 5.15.1 Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Fig. Fig. 5.25.2 Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Fig. Fig. 5.15.1 Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Fig. Fig. 5.25.2 Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Board (a)Board (a) Board (b)Board (b) Board (a)Board (a) Board (b)Board (b) Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2014-02-14 2 Rev.3.0

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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