TPC6113 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPC6113 Lithium Ion Battery Applications Power Management Switch Applications Unit: mm Small footprint due to small and thin package Low drain-source ON-resistance: R = 38 m (typ.) DS (ON) ( V = 4.5V) GS Low leakage current: I = 10 A (max) (V = 20 V) DSS DS Enhancement mode: V = 0.5 to 1.2 V th (V = 10 V, I = 0.2 mA) DS D Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage V 20 V DSS Drain-gate voltage (R = 20 k) V 20 V GS DGR Gate-source voltage V 12 V GSS DC (Note 1) I 5 D Drain current A Pulse (Note 1) I 20 DP JEDEC Drain power dissipation (t = 5 s) P 2.2 W D (Note 2a) JEITA Drain power dissipation (t = 5 s) P 0.7 W D (Note 2b) TOSHIBA 2-3T1A Single pulse avalanche energy (Note 3) E 1.6 mJ AS Weight: 0.011 g (typ.) Avalanche current I 2.5 A AR Channel temperature T 150 C ch Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Circuit Configuration 6 45 Characteristics Symbol MaxUnit Thermal resistance, channel to ambient (t = 5 s) R 56.8 C/W th (ch-a) (Note 2a) Thermal resistance, channel to ambient (t = 5 s) R 178.5 C/W th (ch-a) (Note 2b) 1 2 3 Note: (Note 1), (Note 2), (Note 3) : See other pages. This transistor is an electrostatic-sensitive device. Please handle with caution. Start of commercial production 2009-11 1 2013-11-01 TPC6113 Marking (Note 4) Lot No. Lot code (month) Part No. S3N (or abbreviation code) Product-specific code Pin 1 Lot code Note 5 (year) Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: (a) Device mounted on a glass-epoxy board (a) (t = 5 s) (b) Device mounted on a glass-epoxy board (b) (t = 5 s) FR-4 FR-4 25.4 25.4 0.8 25.4 25.4 0.8 (Unit: mm) (Unit: mm) (a) (b) Note 3: V = 16 V, T = 25C (initial), L =0.2 mH, R = 25 , I = 2.5 A DD ch G AR Note 4: on lower left of the marking indicates Pin 1. Note 5: A line under a Lot No. identifies the indication of product Labels. Not underlined: Pb /INCLUDES > MCV Underlined: G /RoHS COMPATIBLE or G /RoHS Pb Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2013-11-01