DMC1030UFDBQ
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary Features
Low On-Resistance
I
D MAX
Device BV R
DSS DS(ON) MAX
Low Input Capacitance
T = +25C
A
Low Profile, 0.6mm Max Height
34m @ V = 4.5V 5.1A
GS
ESD Protected Gate
40m @ V = 2.5V 4.7A
Q1 GS
12V
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
N-Channel
50m @ V = 1.8V 4.2A
GS
Halogen and Antimony Free. Green Device (Note 3)
3.6A
70m @ VGS = 1.5V
Qualified to AEC-Q101 Standards for High Reliability
-3.9A
59m @ V = -4.5V
GS
PPAP Capable (Note 4)
-3.3A
81m @ V = -2.5V
Q2 GS
-12
P-Channel
115m @ V = -1.8V -2.8A
GS
Mechanical Data
215m @ V = -1.5V -2.0A
GS
Case: U-DFN2020-6 (Type B)
Case Material: Molded Plastic, Green Molding Compound.
Description and Applications
UL Flammability Classification Rating 94V-0
This MOSFET is designed to meet the stringent requirements of
Moisture Sensitivity: Level 1 per J-STD-020
Automotive applications. It is qualified to AEC-Q101, supported by a
Terminals: Finish NiPdAu over Copper Leadframe. Solderable
PPAP and is ideal for use in:
per MIL-STD-202, Method 208 e4
Terminals Connections: See Diagram Below
Load Switch
Weight: 0.0065 grams (Approximate)
Power Management Functions
U-DFN2020-6 (Type B)
Portable Power Adaptors D1 D2
S2
G2
D2
DD1
G1 G2
D1
D2
G1
Gate Protection Gate Protection
ESD PROTECTED S1
S1 S2
Diode Diode
Pin1
N-CHANNEL MOSFET P-CHANNEL MOSFET
Bottom View
Internal Schematic
Ordering Information (Note 5)
Part Number Case Packaging
DMC1030UFDBQ-7 U-DFN2020-6 (Type B) 3000/Tape & Reel
DMC1030UFDBQ-13 U-DFN2020-6 (Type B) 10000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
DMC1030UFDBQ
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Q1 Q2
Characteristic Symbol Unit
N-CHANNEL P-CHANNEL
Drain-Source Voltage 12 -12 V
V
DSS
Gate-Source Voltage V 8 8 V
GSS
Steady T = +25C 5.1 -3.9
A
Continuous Drain Current (Note 6) I A
D
State 4.1 -3.1
TA = +70C
N-CHANNEL: VGS = 4.5V
6.6 -5.0
T = +25C
A
t < 5s A
P-CHANNEL: V = -4.5V I
GS D
5.3 -4.0
T = +70C
A
-1.7
Maximum Continuous Body Diode Forward Current (Note 6) I 2 A
S
Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I 35 -25 A
DM
5 -5
Avalanche Current (L = 0.1mH) I A
AS
4 4
Avalanche Energy (L = 0.1mH) E mJ
AS
Thermal Characteristics
Characteristic Symbol Value Unit
Steady State 1.36
Total Power Dissipation (Note 6) W
P
D
t < 5s 1.89
Steady State 92
Thermal Resistance, Junction to Ambient (Note 6)
R
JA
t < 5s 66
C/W
Thermal Resistance, Junction to Case (Note 6) 18
R
JC
Operating and Storage Temperature Range T T -55 to +150 C
J, STG
Electrical Characteristics Q1 N-CHANNEL (@ T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage BV 12 V V = 0V, I = 250A
DSS GS D
Zero Gate Voltage Drain Current T = +25C 1.0 A
J I V = 12V, V = 0V
DSS DS GS
Gate-Source Leakage 10 A
I V = 8V, V = 0V
GSS GS DS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage 0.4 1 V
V V = V , I = 250A
GS(TH) DS GS D
17 34
V = 4.5V, I = 4.6A
GS D
20 40
V = 2.5V, I = 4.2A
GS D
Static Drain-Source On-Resistance m
R
DS(ON)
24 50 V = 1.8V, I = 3.8A
GS D
28 70 V = 1.5V, I = 1.5A
GS D
Diode Forward Voltage V 0.7 1.2 V V = 0V, I = 4.8A
SD GS S
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance C 1003 pF
iss
V = 6V, V = 0V,
DS GS
Output Capacitance C 132 pF
oss
f = 1.0MHz
Reverse Transfer Capacitance C 115 pF
rss
Gate Resistance 11.3
R V = 0V, V = 0V, f = 1MHz
g DS GS
12.2 nC
Total Gate Charge (V = 4.5V)
GS
Q
g
23.1 nC
Total Gate Charge (V = 8V)
GS
V = 10V, I = 6.8A
DS D
Gate-Source Charge 1.3 nC
Q
gs
Gate-Drain Charge 1.5 nC
Q
gd
Turn-On Delay Time 4.4 ns
t
D(ON)
Turn-On Rise Time 7.4 ns
t V = 6V, V = 4.5V,
R DD GS
Turn-Off Delay Time 18.8 ns
t R = 1.1, R = 1
D(OFF) L G
Turn-Off Fall Time 4.9 ns
t
F
Body Diode Reverse Recovery Time 7.6 ns I = 5.4A, dI/dt = 100A/s
t S
RR
Body Diode Reverse Recovery Charge 0.9 nC
Q I = 5.4A, dI/dt = 100A/s
RR S
Notes: 6. Device mounted on 1 x 1 FR-4 PCB with high coverage 2oz. Copper, single sided.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
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DMC1030UFDBQ January 2016
Diodes Incorporated
www.diodes.com
Document number: DS38242 Rev.1 - 2