DMN1150UFL3
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary Features and Benefits
2
I Max Footprint of just 1.3 mm
D
Device R Max
BV DS(ON)
DSS
T = +25C
A
Ultra-Low Profile Package 0.35mm Profile
2.0A
150m @ V = 4.5V
GS Low Gate Threshold Voltage
N-Channel 12V
Fast Switching Speed
1.8A
185m @ V = 2.5V
GS
Ultra-Small Surface Mount Package
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. Green Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Description and Applications
This MOSFET is designed to minimize the on-state resistance Case: X2-DFN1310-6 (Type B)
(R ), yet maintain superior switching performance, making it
DS(ON) Case Material: Molded Plastic, Green Molding Compound.
ideal for high efficiency power management applications.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Motor Control
Terminals: Finish NiPdAu Annealed over Copper Leadframe.
Power Management Functions
e4
Solderable per MIL-STD-202, Method 208
Backlighting
Weight: 0.002 grams (Approximate)
D1 D2
X2-DFN1310-6 (Type B)
D G S
1 2 2
G1 G2
ESD PROTECTED
Gate Protection Gate Protection
S1
Diode S2
Diode
Q1 N-Channel
Q2 N-Channel
D
S G
1 1 2
Top View Equivalent Circuit
Bottom View
Pin-Out
Ordering Information (Note 4)
Reel Size (inches) Tape Width (mm)
Part Number Quantity per Reel
7 8
DMN1150UFL3-7 3,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
DMN1150UFL3
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Drain-Source Voltage 12 V
V
DSS
Gate-Source Voltage 6 V
V
GSS
Steady T = +25C 2.0
A
Continuous Drain Current (Note 5) V = 4.5V I A
GS D
State 1.6
T = +70C
A
Thermal Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Total Power Dissipation (Note 5) T = +25C P 0.39 W
A D
Thermal Resistance, Junction to Ambient (Note 5) Steady State R 320 C/W
JA
Total Power Dissipation (Note 6) T = +25C P 0.9 W
A D
Thermal Resistance, Junction to Ambient (Note 6) Steady State R 141
JA
C/W
Thermal Resistance, Junction to Case (Note 6) 49
R
JC
Operating and Storage Temperature Range -55 to +150 C
T T
J, STG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage BV 12 V V = 0V, I = 250A
DSS GS D
Zero Gate Voltage Drain Current T = +25C I 1 A V = 12V, V = 0V
J DSS DS GS
Gate-Source Leakage I 10 A V = 6V, V = 0V
GSS GS DS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage 0.35 0.42 1.0 V
VGS(TH) VDS = VGS, ID = 250A
119 150 VGS = 4.5V, ID = 1A
Static Drain-Source On-Resistance 141 185 m VGS = 2.5V, ID = 1A
R
DS(ON)
175 210 VGS = 1.8V, ID = 1A
Diode Forward Voltage V 0.7 1.2 V V = 0V, I = 150mA
SD GS S
DYNAMIC CHARACTERISTICS (Note 8)
115
Input Capacitance C pF
ISS
V = 6V, V = 0V,
DS GS
Output Capacitance 25 pF
C
OSS
f = 1.0MHz
Reverse Transfer Capacitance 23 pF
C
RSS
Gate Resistance 90
R V = 0V, V = 0V, f = 1MHz
G DS GS
Total Gate Charge 1.4 nC
Q
G
0.1
Gate-Source Charge Q nC V = 4V, V = 4.5V, I = 1A
GS DS GS D
0.1
Gate-Drain Charge Q nC
GD
4.0
Turn-On Delay Time t ns
D(ON)
7.4
Turn-On Rise Time t ns
R V = 6V, V = 4V,
GS DS
44
Turn-Off Delay Time t ns R = 1, I = 1A
D(OFF) G D
19
Turn-Off Fall Time t ns
F
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
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DMN1150UFL3 April 2016
Diodes Incorporated
www.diodes.com
Datasheet Number: DS38572 Rev. 3 - 2