TPC6110 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPC6110 Power Management Switch Applications Unit: mm Small footprint due to small and thin package Low drain-source ON resistance: R = 43 m (typ.) DS (ON) Low leakage current: I = 10 A (max) (V = 30 V) DSS DS Enhancement mode: V = 0.8 to 2.0 V th (V = 10 V, I = 0.1mA) DS D Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage V 30 V DSS Drain-gate voltage (R = 20 k) V 30 V GS DGR Gate-source voltage V 25/+20 V GSS I 4.5 DC (Note 1) D Drain current A Pulse (Note 1) I 18 DP JEDEC Drain power dissipation (t = 5 s) 2.2 W P D (Note 2a) JEITA Drain power dissipation (t = 5 s) P 0.7 W TOSHIBA 2-3T1A D (Note 2b) Weight: 0.011 g (typ.) 3.4 mJ Single pulse avalanche energy (Note 3) E AS Avalanche current I 2.3 A AR Repetitive avalanche energy (Note 4) E 0.025 mJ AR Channel temperature T 150 C ch 55 to 150 Storage temperature range T C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Circuit Configuration 6 45 Characteristics Symbol MaxUnit Thermal resistance, channel to ambient (t = 5 s) R 56.8 C/W th (ch-a) (Note 2a) Thermal resistance, channel to ambient (t = 5 s) R 178.5 C/W th (ch-a) (Note 2b) 1 2 3 Note: (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5): See other pages. This transistor is an electrostatic-sensitive device. Please handle with caution. Start of commercial production 2009-08 1 2013-11-01 TPC6110 Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Gate leakage current I V = 20 V, V = 0 V 100 nA GSS GS DS Drain cut-off current I V = 30 V, V = 0 V 10 A DSS DS GS V I = 10 mA, V = 0 V 30 (BR) DSS D GS Drain-source breakdown voltage V V I = 10 mA, V = 10 V (Note 7) 21 (BR) DSX D GS Gate threshold voltage V V = 10 V, I = 0.1 mA 0.8 2.0 V th DS D V = 4.5 V, I = 2.2 A 59 77 GS D Drain-source ON resistance R m DS (ON) V = 10 V, I = 2.2 A 43 56 GS D Forward transfer admittance Y V = 10 V, I = 2.2 A 4.2 8.4 S fs DS D Input capacitance C 510 iss Reverse transfer capacitance C V = 10 V, V = 0 V, f = 1 MHz pF DS GS 85 rss Output capacitance C oss 110 Rise time t r 6 0 V I = 2.2 A D V GS V 10 V OUT Turn-on time t 12 on Switching time ns Fall time t 21 f V 15 V DD Turn-off time t off 70 Duty 1%, t = 10 s w Total gate charge Q g 14 (gate-source plus gate-drain) V 24 V, V = 10 V, DD GS nC Gate-source charge 1 Q I = 4.5 A gs1 D 1.6 Gate-drain (miller) charge Q gd 3.8 Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Drain reverse Pulse (Note 1) I 18 A DRP current Forward voltage (diode) V I = 4.5 A, V = 0 V 1.2 V DSF DR GS Note 7: VDSX mode (the application of a plus voltage between gate and source) may cause decrease in maximum rating of drain-source voltage. 2 2013-11-01 4.7 R = 6.8 L