X-On Electronics has gained recognition as a prominent supplier of TPC6110(TE85L,F,M) MOSFETs across the USA, India, Europe, Australia, and various other global locations. TPC6110(TE85L,F,M) MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

TPC6110(TE85L,F,M) Toshiba

TPC6110(TE85L,F,M) electronic component of Toshiba
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Part No.TPC6110(TE85L,F,M)
Manufacturer: Toshiba
Category: MOSFETs
Description: Toshiba MOSFET N-Ch -30V FET 2.2W -4.5A 510pF
Datasheet: TPC6110(TE85L,F,M) Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 3000
Multiples : 3000
3000 : USD 0.3323
6000 : USD 0.3289
9000 : USD 0.3256
12000 : USD 0.3224
15000 : USD 0.3191
24000 : USD 0.3159
30000 : USD 0.3128
45000 : USD 0.3097
75000 : USD 0.3065
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 1.8664
10 : USD 0.907
100 : USD 0.5059
500 : USD 0.4
1000 : USD 0.3198
3000 : USD 0.2886
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
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We are delighted to provide the TPC6110(TE85L,F,M) from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TPC6110(TE85L,F,M) and other electronic components in the MOSFETs category and beyond.

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TPC6110 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPC6110 Power Management Switch Applications Unit: mm Small footprint due to small and thin package Low drain-source ON resistance: R = 43 m (typ.) DS (ON) Low leakage current: I = 10 A (max) (V = 30 V) DSS DS Enhancement mode: V = 0.8 to 2.0 V th (V = 10 V, I = 0.1mA) DS D Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage V 30 V DSS Drain-gate voltage (R = 20 k) V 30 V GS DGR Gate-source voltage V 25/+20 V GSS I 4.5 DC (Note 1) D Drain current A Pulse (Note 1) I 18 DP JEDEC Drain power dissipation (t = 5 s) 2.2 W P D (Note 2a) JEITA Drain power dissipation (t = 5 s) P 0.7 W TOSHIBA 2-3T1A D (Note 2b) Weight: 0.011 g (typ.) 3.4 mJ Single pulse avalanche energy (Note 3) E AS Avalanche current I 2.3 A AR Repetitive avalanche energy (Note 4) E 0.025 mJ AR Channel temperature T 150 C ch 55 to 150 Storage temperature range T C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Circuit Configuration 6 45 Characteristics Symbol MaxUnit Thermal resistance, channel to ambient (t = 5 s) R 56.8 C/W th (ch-a) (Note 2a) Thermal resistance, channel to ambient (t = 5 s) R 178.5 C/W th (ch-a) (Note 2b) 1 2 3 Note: (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5): See other pages. This transistor is an electrostatic-sensitive device. Please handle with caution. Start of commercial production 2009-08 1 2013-11-01 TPC6110 Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Gate leakage current I V = 20 V, V = 0 V 100 nA GSS GS DS Drain cut-off current I V = 30 V, V = 0 V 10 A DSS DS GS V I = 10 mA, V = 0 V 30 (BR) DSS D GS Drain-source breakdown voltage V V I = 10 mA, V = 10 V (Note 7) 21 (BR) DSX D GS Gate threshold voltage V V = 10 V, I = 0.1 mA 0.8 2.0 V th DS D V = 4.5 V, I = 2.2 A 59 77 GS D Drain-source ON resistance R m DS (ON) V = 10 V, I = 2.2 A 43 56 GS D Forward transfer admittance Y V = 10 V, I = 2.2 A 4.2 8.4 S fs DS D Input capacitance C 510 iss Reverse transfer capacitance C V = 10 V, V = 0 V, f = 1 MHz pF DS GS 85 rss Output capacitance C oss 110 Rise time t r 6 0 V I = 2.2 A D V GS V 10 V OUT Turn-on time t 12 on Switching time ns Fall time t 21 f V 15 V DD Turn-off time t off 70 Duty 1%, t = 10 s w Total gate charge Q g 14 (gate-source plus gate-drain) V 24 V, V = 10 V, DD GS nC Gate-source charge 1 Q I = 4.5 A gs1 D 1.6 Gate-drain (miller) charge Q gd 3.8 Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Drain reverse Pulse (Note 1) I 18 A DRP current Forward voltage (diode) V I = 4.5 A, V = 0 V 1.2 V DSF DR GS Note 7: VDSX mode (the application of a plus voltage between gate and source) may cause decrease in maximum rating of drain-source voltage. 2 2013-11-01 4.7 R = 6.8 L

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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