X-On Electronics has gained recognition as a prominent supplier of TPC6012(TE85L,F,M) MOSFETs across the USA, India, Europe, Australia, and various other global locations. TPC6012(TE85L,F,M) MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

TPC6012(TE85L,F,M) Toshiba

TPC6012(TE85L,F,M) electronic component of Toshiba
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Part No.TPC6012(TE85L,F,M)
Manufacturer: Toshiba
Category: MOSFETs
Description: Toshiba MOSFET N-Ch 20V FET 6A 2.2W 630pF
Datasheet: TPC6012(TE85L,F,M) Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.2952 ea
Line Total: USD 885.6 
Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.2952
6000 : USD 0.2734
9000 : USD 0.2641

   
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Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
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We are delighted to provide the TPC6012(TE85L,F,M) from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TPC6012(TE85L,F,M) and other electronic components in the MOSFETs category and beyond.

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TPC6012 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS ) TPC6012 Notebook PC Applications Portable Equipment Applications Unit: mm Small footprint due to small and thin package Low drain-source ON resistance: R = 20 m (typ.) DS (ON) Low leakage current: I = 10 A (max) (V = 20 V) DSS DS Enhancement mode: V = 0.5 to 1.2 V (V = 10 V, I = 200 A) th DS D Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage V 20 V DSS Drain-gate voltage (R = 20 k) V 20 V GS DGR Gate-source voltage V 12 V GSS I 6 DC (Note 1) D Drain current A Pulse (Note 1) I 24 DP Drain power dissipation (t = 5 s) 2.2 W P D (Note 2a) Drain power dissipation (t = 5 s) JEDEC P 0.7 W D (Note 2b) JEITA 2.3 mJ Single pulse avalanche energy (Note 3) E AS TOSHIBA 2-3T1A Avalanche current I 3 A AR Weight: 0.011 g (typ.) Channel temperature T 150 C ch Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Circuit Configuration 6 5 4 Characteristics Symbol Max Unit Thermal resistance, channel to ambient (t = 5 s) R 56.8 C/W th (ch-a) (Note 2a) Thermal resistance, channel to ambient (t = 5 s) R 178.5 C/W th (ch-a) (Note 2b) 1 2 3 Note: (Note 1), (Note 2), (Note 3): See other pages. This transistor is an electrostatic-sensitive device. Please handle with caution. Start of commercial production 2009-10 1 2018-04-09 2018 Toshiba Electronic Devices & Storage Corporation TPC6012 Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current I V = 12 V, V = 0 V 100 nA GSS GS DS Drain cut-off current I V = 20 V, V = 0 V 10 A DSS DS GS V I = 10 mA, V = 0 V 20 (BR) DSS D GS Drain-source breakdown voltage V V I = 10 mA, V = 12 V 8 (BR) DSX D GS Gate threshold voltage V V = 10 V, I = 200 A 0.5 1.2 V th DS D V = 2.5 V, I = 3 A 25 38 GS D Drain-source ON resistance R m DS (ON) V = 4.5 V, I = 3 A 15 20 GS D Input capacitance C 630 iss Reverse transfer capacitance C V = 10 V, V = 0 V, f = 1 MHz 150 pF rss DS GS Output capacitance C 180 oss Rise time t I = 3 A 5 r D 5 V V GS V OUT 0 V Turn-on time t 10 on Switching time ns Fall time t 10 f V 10 V DD Duty 1%, t = 10 s w Turn-off time t 24 off Total gate charge Q 9 g (gate-source plus gate-drain) V 16 V, V = 5 V, DD GS nC Gate-source charge 1 Q I = 6 A 1.8 gs 1 D Gate-drain (miller) charge Q 3.4 gd Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit Drain reverse Pulse (Note 1) I 24 A DRP current Forward voltage (diode) V I = 6 A, V = 0 V 1.2 V DSF DR GS 2 2018-04-09 2018 Toshiba Electronic Devices & Storage Corporation R = 3.3 L

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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