TPC6012 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS ) TPC6012 Notebook PC Applications Portable Equipment Applications Unit: mm Small footprint due to small and thin package Low drain-source ON resistance: R = 20 m (typ.) DS (ON) Low leakage current: I = 10 A (max) (V = 20 V) DSS DS Enhancement mode: V = 0.5 to 1.2 V (V = 10 V, I = 200 A) th DS D Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage V 20 V DSS Drain-gate voltage (R = 20 k) V 20 V GS DGR Gate-source voltage V 12 V GSS I 6 DC (Note 1) D Drain current A Pulse (Note 1) I 24 DP Drain power dissipation (t = 5 s) 2.2 W P D (Note 2a) Drain power dissipation (t = 5 s) JEDEC P 0.7 W D (Note 2b) JEITA 2.3 mJ Single pulse avalanche energy (Note 3) E AS TOSHIBA 2-3T1A Avalanche current I 3 A AR Weight: 0.011 g (typ.) Channel temperature T 150 C ch Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Circuit Configuration 6 5 4 Characteristics Symbol Max Unit Thermal resistance, channel to ambient (t = 5 s) R 56.8 C/W th (ch-a) (Note 2a) Thermal resistance, channel to ambient (t = 5 s) R 178.5 C/W th (ch-a) (Note 2b) 1 2 3 Note: (Note 1), (Note 2), (Note 3): See other pages. This transistor is an electrostatic-sensitive device. Please handle with caution. Start of commercial production 2009-10 1 2018-04-09 2018 Toshiba Electronic Devices & Storage Corporation TPC6012 Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current I V = 12 V, V = 0 V 100 nA GSS GS DS Drain cut-off current I V = 20 V, V = 0 V 10 A DSS DS GS V I = 10 mA, V = 0 V 20 (BR) DSS D GS Drain-source breakdown voltage V V I = 10 mA, V = 12 V 8 (BR) DSX D GS Gate threshold voltage V V = 10 V, I = 200 A 0.5 1.2 V th DS D V = 2.5 V, I = 3 A 25 38 GS D Drain-source ON resistance R m DS (ON) V = 4.5 V, I = 3 A 15 20 GS D Input capacitance C 630 iss Reverse transfer capacitance C V = 10 V, V = 0 V, f = 1 MHz 150 pF rss DS GS Output capacitance C 180 oss Rise time t I = 3 A 5 r D 5 V V GS V OUT 0 V Turn-on time t 10 on Switching time ns Fall time t 10 f V 10 V DD Duty 1%, t = 10 s w Turn-off time t 24 off Total gate charge Q 9 g (gate-source plus gate-drain) V 16 V, V = 5 V, DD GS nC Gate-source charge 1 Q I = 6 A 1.8 gs 1 D Gate-drain (miller) charge Q 3.4 gd Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit Drain reverse Pulse (Note 1) I 24 A DRP current Forward voltage (diode) V I = 6 A, V = 0 V 1.2 V DSF DR GS 2 2018-04-09 2018 Toshiba Electronic Devices & Storage Corporation R = 3.3 L